Ultrathin Sn-doped GaO for power field-effect transistors: Si-compatible 4-inch array with high-k gate dielectric.

Sci Bull (Beijing)

School of Integrated Circuits and Electronics and Yangtze Delta Region Academy, Beijing Institute of Technology, Beijing 100081, China. Electronic address:

Published: June 2024

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Source
http://dx.doi.org/10.1016/j.scib.2024.04.059DOI Listing

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