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Demonstration of Controlled Skyrmion Injection Across a Thickness Step. | LitMetric

AI Article Synopsis

  • - Spintronic devices using magnetic skyrmions are gaining interest, especially in how their performance can improve by exploring higher dimensions instead of just 2D thin films.
  • - Researchers have successfully demonstrated a method to inject skyrmions using charge currents, allowing them to move from a stable thin region of an FeGe material into a thicker, less stable area.
  • - This process requires a much lower current density than what's needed to shift traditional magnetic domain walls, suggesting a promising new approach for future spintronic device development.

Article Abstract

Spintronic devices incorporating magnetic skyrmions have attracted significant interest recently. Such devices traditionally focus on controlling magnetic textures in 2D thin films. However, enhanced performance of spintronic properties through the exploitation of higher dimensionalities motivates the investigation of variable-thickness skyrmion devices. We report the demonstration of a skyrmion injection mechanism that utilizes charge currents to drive skyrmions across a thickness step and, consequently, a metastability barrier. Our measurements show that under certain temperature and field conditions skyrmions can be reversibly injected from a thin region of an FeGe lamella, where they exist as an equilibrium state, into a thicker region, where they can only persist as a metastable state. This injection is achieved with a current density of 3 × 10 A m, nearly 3 orders of magnitude lower than required to move magnetic domain walls. This highlights the possibility to use such an element as a skyrmion source/drain within future spintronic devices.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11157652PMC
http://dx.doi.org/10.1021/acs.nanolett.4c01605DOI Listing

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