AI Article Synopsis

  • Researchers developed a technique to integrate 2D materials with organic semiconductors, specifically a SnSe/PTAA heterojunction array that performs well in trapping light.
  • The method used includes low-temperature molecular beam epitaxy and spin-coating, resulting in effective charge transfer due to strong C-Se covalent coupling.
  • The resulting photodetectors showed impressive performance metrics, including high responsivity and external quantum efficiency, suggesting their potential for advanced optoelectronic applications.

Article Abstract

Controllable large-scale integration of two-dimensional (2D) materials with organic semiconductors and the realization of strong coupling between them still remain challenging. Herein, we demonstrate a wafer-scale, vertically layered SnSe/PTAA heterojunction array with high light-trapping ability via a low-temperature molecular beam epitaxy method and a facile spin-coating process. Conductive probe atomic force microscopy (CP-AFM) measurements reveal strong rectification and photoresponse behavior in the individual SnSe nanosheet/PTAA heterojunction. Theoretical analysis demonstrates that vertically layered SnSe/PTAA heterojunctions exhibit stronger C-Se covalent coupling than that of the conventional tiled type, which could facilitate more efficient charge transfer. Benefiting from these advantages, the SnSe/PTAA heterojunction photodetectors with an optimized PTAA concentration show high performance, including a responsivity of 41.02 A/W, an external quantum efficiency of 1.31 × 10%, and high uniformity. The proposed approach for constructing large-scale 2D inorganic-organic heterostructures represents an effective route to fabricate high-performance broadband photodetectors for integrated optoelectronic systems.

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Source
http://dx.doi.org/10.1021/acs.nanolett.4c01515DOI Listing

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