The self-powered PVP-Co@C nanofibers/n-GaAs heterojunction photodetector (HJPD) was fabricated by electrospinning of the nanofibers onto GaAs. An excellent rectification ratio of 6.60 × 10was obtained from-measurements of the device in the dark. The-measurements of the fabricated device under 365 nm, 395 nm and 850 nm lights, as well as-measurements in visible light depending on the light intensity, were performed. The HJPD demonstrated excellent photodetection performance in terms of a good responsivity of ∼225 mA W(at -1.72 V) and at zero bias, an impressive detectivity of 6.28 × 10Jones, and a high on/off ratio of 8.38 × 10, all at 365 nm wavelength. In addition, the maximum external quantum efficiency and NPDR values were 3495% ( = -1.72 V) and 2.60 × 10W(= 0.0 V), respectively, while the minimum NEP value was ∼10W.Hzfor 365 nm at= 0.V volts. The HJPD also exhibited good long-term stability in air after 30 d without any encapsulation.
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http://dx.doi.org/10.1088/1361-6528/ad4973 | DOI Listing |
Nanotechnology
May 2024
Department of Physics, Science Faculty, Atatürk University, 25240 Erzurum, Turkey.
The self-powered PVP-Co@C nanofibers/n-GaAs heterojunction photodetector (HJPD) was fabricated by electrospinning of the nanofibers onto GaAs. An excellent rectification ratio of 6.60 × 10was obtained from-measurements of the device in the dark.
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