Death during autoerotic episodes is of special concern to law enforcement officials, the coroner or medical examiner, the family of the decedent, and to society as a whole. As in the probing of any violent demise, accurate preservation of all evidentiary material, complete photographic documentation, reconstruction of the scene, and interviews with family and acquaintances ("psychological autopsy") are mandatory for proper completion of the case. A recent, atypical instance of sexual asphyxia arising from a bizarre incident exemplifies the foregoing dicta and provides a vivid example of "psychopathia sexualis."
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Post-Treatment of Monolayer MoS Field-Effect Transistors with HO Vapor: Alleviation of Remote Channel Doping.
ACS Appl Mater Interfaces
January 2025
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
Atomic layer deposition (ALD) of high-k dielectric films on MoS channels can lead to inadvertent remote electron doping of channels owing to nonequilibrium ALD conditions, such as the low temperatures and short purge times required for pinhole-free coating, as well as the weak physical adsorption of ALD precursors on MoS. In this study, we propose the application of a simple and effective HO vapor post-treatment (HO PT) at 100 °C immediately after complete integration of bottom- and top-gate monolayer MoS field-effect transistors (FETs), to address the inadvertent channel doping effect. When HO PT was applied to bottom-gate monolayer MoS FETs with an ALD-AlO passivation layer, the mitigation of channel doping was confirmed through electrical and optical measurements.
View Article and Find Full Text PDFElectron-Beam-Induced Negative Differential Transconductance Homojunction Device Based on van der Waals Materials for Functionally Complete Ternary Computing.
ACS Nano
December 2024
Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.
Negative differential transconductance (NDT) devices have emerged as promising candidates for multivalued logic computing, and particularly for ternary logic systems. To enable computation of any ternary operation, it is essential to have a functionally complete set of ternary logic gates, which remains unrealized with current NDT technologies, posing a critical limitation for higher-level circuit design. Additionally, NDT devices typically rely on heterojunctions, complicating fabrication and impacting reliability due to the introduction of additional materials and interfaces.
View Article and Find Full Text PDFTernary Logic Transistors Using Multi-Stacked 2D Electron Gas Channels in Ultrathin Oxide Heterostructures.
Adv Sci (Weinh)
December 2024
Department of Materials Science and Chemical Engineering, Hanyang University, Ansan, 15588, South Korea.
2D electron gas field-effect transistors (2DEG-FETs), employing 2DEG formed at an interface of ultrathin (≈6 nm) AlO/ZnO heterostructure as the active channel, exhibit outstanding drive current (≈215 µA), subthreshold swing (≈132 mV dec), and field effect mobility (≈49.6 cm V s) with a high on/off current ratio of ≈10. It is demonstrated that the AlO upper layer in AlO/ZnO heterostructure acts as the source/drain resistance component during transistor operations, and the applied potential to the 2DEG channel is successfully modulated by AlO thickness variations so that the threshold voltage (V) is effectively tuned.
View Article and Find Full Text PDFUse of Accelerometry and Global Positioning System (GPS) to Describe Children's Park-Based Physical Activity Among Racial and Ethnic Minority Youth.
J Urban Health
December 2024
Department of Parks, Recreation, and Tourism Management, NC State University, Raleigh, NC, USA.
Parks are one component of the built environment to promote regular physical activity (PA) among youth. This study investigated differences in park-based PA among youth based on demographics and park features in racially or ethnically diverse communities. In 2017-2018, parks were selected in majority Asian (n = 3), Latino (n = 5), and Black (n = 4) neighborhoods in North Carolina (n = 6) and New York (n = 6).
View Article and Find Full Text PDFOptimization Conditions for High-Power AlGaN/InGaN/GaN/AlGaN High-Electron-Mobility Transistor Grown on SiC Substrate.
Materials (Basel)
November 2024
Department of Semiconductor Electronic Engineering, Daegu Catholic University, Gyeongsan 38430, Gyeongbuk, Republic of Korea.
In this study, we aimed to propose an optimal structure for an AlGaN/InGaN/GaN/AlGaN/SiC HEMT by investigating how the breakdown voltage varies with the thickness and composition of the InGaN layer. The breakdown voltage was shown to be highly dependent on the In composition. Specifically, as the In composition increased, the breakdown voltage rapidly increased, but it exhibited saturation when the In composition exceeded 0.
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