AI Article Synopsis
- InAs/AlSb quantum cascade detectors (QCDs) are developed on GaSb substrates, showcasing enhanced characteristics like a low effective electron mass and a high conduction band offset, which improve performance and reduce noise.
- The balance of InAs and AlSb is achieved with a ratio of 0.96:1 on the GaSb substrate, while submonolayer InSb layers are introduced for further optimization of the QCD design.
- Four different active regions are designed with varying InAs:AlSb thickness ratios, resulting in an optimized QCD at 4.3 µm that boasts a peak responsivity of 26.12 mA/W and notable detectivity, along with higher-energy interband signals in the infrared range
Article Abstract
InAs/AlSb quantum cascade detectors (QCDs) grown strain-balanced on GaSb substrates are presented. This material system offers intrinsic performance-improving properties, like a low effective electron mass of the well material of 0.026 , enhancing the optical transition strength, and a high conduction band offset of 2.28 eV, reducing the noise and allowing for high optical transition energies. InAs and AlSb strain balance each other on GaSb with an InAs:AlSb ratio of 0.96:1. To regain the freedom of a lattice-matched material system regarding the optimization of a QCD design, submonolayer InSb layers are introduced. With strain engineering, four different active regions between 3.65 and 5.5 µm were designed with InAs:AlSb thickness ratios of up to 2.8:1, and subsequently grown and characterized. This includes an optimized QCD design at 4.3 µm, with a room-temperature peak responsivity of 26.12 mA/W and a detectivity of 1.41 × 10 Jones. Additionally, all QCD designs exhibit higher-energy interband signals in the mid- to near-infrared, stemming from the InAs/AlSb type-II alignment and the narrow InAs band gap.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11052536 | PMC |
| http://dx.doi.org/10.1515/nanoph-2023-0702 | DOI Listing |
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