AI Article Synopsis
- Researchers created organic ferroelectric field-effect transistors (OFe-FETs) using a specific material, poly(vinylidene fluoride-trifluoroethylene) [(PVDF-TrFE)], as the dielectric.
- These transistors show unique electrical characteristics like hysteresis and behaviors similar to how neurons adapt and strengthen connections over time, akin to synaptic plasticity.
- An analytical model was developed to better understand these devices' electrical properties, effectively combining empirical data with a compact representation, and it aligns well with experimental results.
Article Abstract
Leveraging poly(vinylidene fluoride-trifluoroethylene) [(PVDF-TrFE)] as the dielectric, we fabricated organic ferroelectric field-effect transistors (OFe-FETs). These devices demonstrate quasi-static transfer characteristics that include a hysteresis window alongside transient phenomena that bear resemblance to synaptic plasticity-encapsulating excitatory postsynaptic current (EPSC) as well as both short-term and long-term potentiation (STP/LTP). We also explore and elucidate other aspects such as the subthreshold swing and the hysteresis window under dynamic state by varying the pace of voltage sweeps. In addition, we developed an analytical model that describes the electrical properties of OFe-FETs, which melds an empirical formula for ferroelectric polarization with a compact model. This model agrees well with the experimental data concerning quasi-static transfer characteristics, potentially serving as a quantitative tool to improve the understanding and design of OFe-FETs.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11051882 | PMC |
| http://dx.doi.org/10.3390/mi15040467 | DOI Listing |
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