AI Article Synopsis
- Two-dimensional materials are significantly affected by their surrounding dielectric environment, which can weaken the Coulomb interaction between electrons.
- This reduction in Coulomb interaction is crucial for manipulating the insulating states in Mott materials, enabling control over what is termed "Mottness."
- Our calculations indicate that by applying Coulomb engineering, we can achieve notable changes in electronic properties, including an insulator-to-metal transition, and we outline conditions necessary for experimental validation of this approach.
Article Abstract
Two-dimensional materials can be strongly influenced by their surroundings. A dielectric environment screens and reduces the Coulomb interaction between electrons in the two-dimensional material. Since in Mott materials the Coulomb interaction is responsible for the insulating state, manipulating the dielectric screening provides direct control over Mottness. Our many-body calculations reveal the spectroscopic fingerprints of such Coulomb engineering: we demonstrate eV-scale changes to the position of the Hubbard bands and show a Coulomb engineered insulator-to-metal transition. Based on our proof-of-principle calculations, we discuss the (feasible) conditions under which our scenario of Coulomb engineering of Mott materials can be realized experimentally.
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Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11041779 | PMC |
| http://dx.doi.org/10.1038/s41699-023-00408-x | DOI Listing |
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