High-performance optoelectronic and thermoelectric properties of transparent conductors based on TlO under pressure.

In this work, the full-potential linearized augmented plane wave method (FP- LAPW) and the modified Becke-Johnson (mBJ) functional with spin-orbit (SO) coupling are used the obtain the structural, optoelectronic and thermoelectric properties of TlO under pressure. The results show that TlO, as transparent conducting oxide (TCO), is a direct bandgap semiconductor with a band gap of 1.23 eV. The band gap value and the effective mass of electrons increases by increasing pressure. Density of state spectra reveal that the nature of electrons in Tl-6s state in the bottom of conduction band, like free electrons in s state, is responsible for the conducting behavior of TlO. A blue shift is observed in optical spectra such as electron energy loss and absorption spectra with an increase in pressure. Obtained dielectric constants under pressure are inversely proportional to the band gap value according to Penn model. The effects of pressure on thermometric properties are also explored. The hydrostatic pressure increases Seebeck coefficient, while it decreases thermal conductivity that is an effective way to the enhancement of the thermoelectric efficiency of TCOs. A figure of merit (ZT) of 0.98 in p-type TlO is achieved that is desirable for using in thermoelectric devices.