The van der Waals antiferromagnetic topological insulator MnBiTe represents a promising platform for exploring the layer-dependent magnetism and topological states of matter. Recently observed discrepancies between magnetic and transport properties have aroused controversies concerning the topological nature of MnBiTe in the ground state. In this article, we demonstrate that fabrication can induce mismatched even-odd layer dependent magnetotransport in few-layer MnBiTe. We perform a comprehensive study of the magnetotransport properties in 6- and 7-septuple-layer MnBiTe, and reveal that both even- and odd-number-layer device can show zero Hall plateau phenomena in zero magnetic field. Importantly, a statistical survey of the optical contrast in more than 200 MnBiTe flakes reveals that the zero Hall plateau in odd-number-layer devices arises from the reduction of the effective thickness during the fabrication, a factor that was rarely noticed in previous studies of 2D materials. Our finding not only provides an explanation to the controversies regarding the discrepancy of the even-odd layer dependent magnetotransport in MnBiTe, but also highlights the critical issues concerning the fabrication and characterization of 2D material devices.
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http://dx.doi.org/10.1038/s41467-024-47779-3 | DOI Listing |
Nat Commun
April 2024
Department of Physics, Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-Nano Devices, Renmin University of China, 100872, Beijing, China.
The van der Waals antiferromagnetic topological insulator MnBiTe represents a promising platform for exploring the layer-dependent magnetism and topological states of matter. Recently observed discrepancies between magnetic and transport properties have aroused controversies concerning the topological nature of MnBiTe in the ground state. In this article, we demonstrate that fabrication can induce mismatched even-odd layer dependent magnetotransport in few-layer MnBiTe.
View Article and Find Full Text PDFNat Commun
January 2024
Department of Physics, The Ohio State University, Columbus, OH, 43210, USA.
Two-dimensional (2D) materials have drawn immense interests in scientific and technological communities, owing to their extraordinary properties and their tunability by gating, proximity, strain and external fields. For electronic applications, an ideal 2D material would have high mobility, air stability, sizable band gap, and be compatible with large scale synthesis. Here we demonstrate air stable field effect transistors using atomically thin few-layer PdSe sheets that are sandwiched between hexagonal BN (hBN), with large saturation current > 350 μA/μm, and high field effect mobilities of ~ 700 and 10,000 cm/Vs at 300 K and 2 K, respectively.
View Article and Find Full Text PDFNano Lett
November 2023
Department of Chemistry, Columbia University, 3000 Broadway, New York, New York 10027, United States.
Two-dimensional antiferromagnets have garnered considerable interest for the next generation of functional spintronics. However, many bulk materials from which two-dimensional antiferromagnets are isolated are limited by their air sensitivity, low ordering temperatures, and insulating transport properties. TaFeTe aims to address these challenges with increased air stability, metallic transport, and robust antiferromagnetism.
View Article and Find Full Text PDFJ Am Chem Soc
September 2023
School of Materials Science and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China.
The progress of unconventional superconductors at the two-dimensional (2D) limit has inspired much interest. Recently, a new superconducting system was discovered in the semimetallic ternary Bi-O-S family. However, pure-phase crystals are difficult to synthesize because of the complicated stacking sequence of multiple charged layers and similar formation kinetics among ternary polytypes, leaving several fundamental issues regarding the structure-superconductivity correlation unresolved.
View Article and Find Full Text PDFPhys Chem Chem Phys
November 2021
School of Mechanical Engineering, Sungkyunkwan University, Suwon 16419, South Korea.
Temperature-dependent electrical and magneto-transport measurements have been performed on devices composed of few layer (4L) graphene grown directly on SiO/Si substrates using the CVD method. An intrinsic energy band-gap of 4.6 meV in 4L graphene is observed, which primarily dictates the current transport at <50 K.
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