Phosphorene is a unique semiconducting two-dimensional platform for enabling spintronic devices integrated with phosphorene nanoelectronics. Here, we have designed an all phosphorene lattice lateral spin valve device, conceived via patterned magnetic substituted atoms of 3d-block elements at both ends of a phosphorene nanoribbon acting as ferromagnetic electrodes in the spin valve. Through First-principles based calculations, we have extensively studied the spin-dependent transport characteristics of the new spin valve structures. Systematic exploration of the magnetoresistance (MR) of the spin valve for various substitutional atoms and bias voltage resulted in a phase diagram offering a colossal MR for V and Cr-substitutional atoms. Such MR can be directly attributed to their specific electronic structure, which can be further tuned by a gate voltage, for electric field controlled spin valves. The spin-dependent transport characteristics here reveal new features such as negative conductance oscillation and switching of the sign of MR due to change in the majority spin carrier type. Our study creates possibilities for the design of nanometric spin valves, which could enable integration of memory and logic elements for all phosphorene 2D processors.
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http://dx.doi.org/10.1038/s41598-024-58589-4 | DOI Listing |
Phys Chem Chem Phys
January 2025
King Abdullah University of Science and Technology (KAUST), Physical Science and Engineering Division (PSE), Thuwal 23955-6900, Saudi Arabia.
Employing density functional theory for ground state quantum mechanical calculations and the non-equilibrium Green's function method for transport calculations, we investigate the potential of CdS, ZnS, CdZnS, and ZnCdS as tunnel barriers in magnetic tunnel junctions for spintronics. Based on the finding that the valence band edges of these semiconductors are dominated by p orbitals and the conduction band edges by s orbitals, we show that symmetry filtering of the Bloch states in magnetic tunnel junctions with Fe electrodes results in high tunneling magnetoresistances and high spin-polarized current (up to two orders of magnitude higher than in the case of the Fe/MgO/Fe magnetic tunnel junction).
View Article and Find Full Text PDFACS Nano
January 2025
Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588-0299, United States.
A spin valve represents a well-established device concept in magnetic memory technologies, whose functionality is determined by electron transmission, controlled by the relative alignment of magnetic moments of the two ferromagnetic layers. Recently, the advent of valleytronics has conceptualized a valley spin valve (VSV)─a device that utilizes the valley degree of freedom and spin-valley locking to achieve a similar valve effect without relying on magnetism. In this study, we propose a nonvolatile VSV (-VSV) based on a two-dimensional (2D) ferroelectric semiconductor where resistance of -VSV is controlled by a ferroelectric domain wall between two uniformly polarized domains.
View Article and Find Full Text PDFHeliyon
January 2025
National Institute of Materials Physics, 077125 Magurele, Ilfov, Romania.
Non-volatile electronic memory elements are very attractive for applications, not only for information storage but also in logic circuits, sensing devices and neuromorphic computing. Here, a ferroelectric film of guanine nucleobase is used in a resistive memory junction sandwiched between two different ferromagnetic films of Co and CoCr alloys. The magnetic films have an in-plane easy axis of magnetization and different coercive fields whereas the guanine film ensures a very long spin transport length, at 100 K.
View Article and Find Full Text PDFSpectrochim Acta A Mol Biomol Spectrosc
December 2024
Hubei Key Laboratory of Optical Information and Pattern Recognition, Wuhan Institute of Technology, Wuhan 430205, China. Electronic address:
Two-dimensional antiferromagnetic materials have attracted wide attention in both performance and application, which are of great significance for spin valves and next-generation magnetic random access memory devices. The spin-phonon coupling effect plays a crucial role in magnon dynamics. However, there is still a lack of research on the spin-phonon coupling effect of two-dimensional antiferromagnetic flakes.
View Article and Find Full Text PDFAdv Mater
November 2024
Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201, China.
Organic semiconductors, characterized by their exceptionally long spin relaxation times (≈ms) and unique spinterface effects, are considered game-changers in spintronics. However, achieving high-performance and wide-range tunable magnetoresistance (MR) in organic spintronic devices remains challenging, severely limiting the development of organic spintronics. This work combines straintronic multiferroic heterostructures with organic spin valve (OSV) to develop a three-terminal OSV device with a gate structure.
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