AI Article Synopsis
- * The study introduces a low-temperature synthesis method (400 °C) for 2D tungsten diselenide (WSe) using a simple process under ultrahigh vacuum, resulting in large-area, uniform films.
- * Memristors made from the WSe films enable the creation of a compact neuron circuit that can be reconfigured for homeostasis, which is beneficial for neuromorphic computing applications.
Article Abstract
Low-temperature large-area growth of two-dimensional (2D) transition-metal dichalcogenides (TMDs) is critical for their integration with silicon chips. Especially, if the growth temperatures can be lowered below the back-end-of-line (BEOL) processing temperatures, the Si transistors can interface with 2D devices (in the back end) to enable high-density heterogeneous circuits. Such configurations are particularly useful for neuromorphic computing applications where a dense network of neurons interacts to compute the output. In this work, we present low-temperature synthesis (400 °C) of 2D tungsten diselenide (WSe) via the selenization of the W film under ultrahigh vacuum (UHV) conditions. This simple yet effective process yields large-area, homogeneous films of 2D TMDs, as confirmed by several characterization techniques, including reflection high-energy electron diffraction, atomic force microscopy, transmission electron microscopy, and different spectroscopy methods. Memristors fabricated using the grown WSe film are leveraged to realize a novel compact neuron circuit that can be reconfigured to enable homeostasis.
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| http://dx.doi.org/10.1021/acsami.3c18446 | DOI Listing |
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