AI Article Synopsis
- Current density imaging using nitrogen-vacancy (NV) centers in diamond allows researchers to study the electronic phenomena and carrier dynamics in two-dimensional materials like graphene under high pressure.
- The technique creates high-resolution, two-dimensional images that effectively show the complex current flow and pressure distribution in graphene ribbon and BN-graphene-BN devices.
- This approach not only enhances understanding of electronic transport in these materials but also offers a non-invasive method for evaluating semiconductor circuits under high pressure.
Article Abstract
Current density imaging is helpful for discovering interesting electronic phenomena and understanding carrier dynamics, and by combining pressure distributions, several pressure-induced novel physics may be comprehended. In this work, noninvasive, high-resolution two-dimensional images of the current density and pressure gradient for graphene ribbon and BN-graphene-BN devices are explored using nitrogen-vacancy (NV) centers in diamond under high pressure. The two-dimensional vector current density is reconstructed by the vector magnetic field mapped by the near-surface NV center layer in the diamond. The current density images accurately and clearly reproduce the complicated structure and current flow of graphene under high pressure. Additionally, the spatial distribution of the pressure is simultaneously mapped, rationalizing the nonuniformity of the current density under high pressure. The current method opens a significant new avenue to investigate electronic transport and conductance variations in two-dimensional materials and electrical devices under high pressure as well as for nondestructive evaluation of semiconductor circuits.
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| http://dx.doi.org/10.1021/acs.nanolett.4c00780 | DOI Listing |
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