Semiconductor nanofilm fabrication with advanced technology is of great importance for next-generation electronics/optoelectronics. Fabrication of high-quality and perfectly oriented semiconductor thin films and integration into high-performance electronic devices with low cost and high efficiency are huge challenges. Here we exquisitely utilized the Marangoni effect to perfectly guide tin disulfide (SnS) nanocoins into an ordered assembly in milliseconds, resulting in an uniaxial-oriented monolayer semiconductor film. Further exploration revealed that the formed "crumple zone" at the interface caused by the Marangoni force endows the nanofilm with a rapid healable capability, which can be easily transferred to arbitrary substrates. As a proof of concept, the nanocoin-monolayer was transferred onto a micro-interdigitated electrode substrate to form a high-performance chemiresistive sensor that can effectively monitor the trace amounts of toxic gases. In addition, the assembled monolayer nanofilms can be conformally printed on freeform surfaces: both flat and nonflat substrates. This efficient and low-cost Marangoni force-assisted surface self-assembly (MFA-SSA) strategy is promising for advanced microelectronics and real industrial applications.
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http://dx.doi.org/10.1021/acsami.4c01361 | DOI Listing |
Phys Chem Chem Phys
January 2025
Department of Chemistry and Biochemistry, Old Dominion University, Norfolk, Virginia 23529, USA.
Understanding the nature of π-stacking interactions is important to molecular recognition, self-assembly, and organic semiconductors. The stack bond order (SBO) model of π-stacking has shown that the conformations of dimers are found at orientations where the combinations of monomer MOs are overall bonding within the stack. DFT calculations show that parallel displaced minima found on the potential energy surface for the π-stacked dimers of pentacene and perfluoropentacene occur when the dimer MOs are constructed from combinations of monomer MOs with an allowed SBO.
View Article and Find Full Text PDFPhilos Trans A Math Phys Eng Sci
January 2025
Institute for Solid State Physics, Friedrich Schiller University Jena, Jena, Germany.
Memristive technology mitigates the memory wall issue in von Neumann architectures by enabling in-memory data processing. Unlike traditional complementary metal-oxide semiconductor (CMOS) technology, memristors provide a new paradigm for implementing cryptographic functions and security considerations. While prior research explores memristors for cryptographic functions and side-channel attack vulnerabilities, our study uniquely addresses memristor-oriented countermeasures.
View Article and Find Full Text PDFSci Adv
January 2025
Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics, Xiamen University, Xiamen 361005, P. R. China.
The utilization of low-dimensional perovskites (LDPs) as interlayers on three-dimensional (3D) perovskites has been regarded as an efficient strategy to enhance the performance of perovskite solar cells. Yet, the formation mechanism of LDPs and their impacts on the device performance remain elusive. Herein, we use dimensional engineering to facilitate the controllable growth of 1D and 2D structures on 3D perovskites.
View Article and Find Full Text PDFRSC Adv
January 2025
Institute of Theoretical and Applied Research, Duy Tan University Ha Noi 100000 Vietnam
In this work, Ge vacancies and doping with transition metals (Mn and Fe) are proposed to modulate the electronic and magnetic properties of GeP monolayers. A pristine GeP monolayer is a non-magnetic two-dimensional (2D) material, exhibiting indirect gap semiconductor behavior with an energy gap of 1.34(2.
View Article and Find Full Text PDFACS Nano
January 2025
Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588-0299, United States.
A spin valve represents a well-established device concept in magnetic memory technologies, whose functionality is determined by electron transmission, controlled by the relative alignment of magnetic moments of the two ferromagnetic layers. Recently, the advent of valleytronics has conceptualized a valley spin valve (VSV)─a device that utilizes the valley degree of freedom and spin-valley locking to achieve a similar valve effect without relying on magnetism. In this study, we propose a nonvolatile VSV (-VSV) based on a two-dimensional (2D) ferroelectric semiconductor where resistance of -VSV is controlled by a ferroelectric domain wall between two uniformly polarized domains.
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