AI Article Synopsis

  • The study explores the potential of atomically-thin van der Waals crystals for developing new quantum phases and advanced device applications like magnetoresistance and ferrimagnetism.
  • It focuses on a specific two-dimensional multiferroic material, CuCrPS, which exhibits unique magnetoelectric coupling and ferrielectric transitions when subjected to an external electric field.
  • The findings highlight how thin-layer CuCrPS can achieve a significant reduction in interlayer magnetic coupling energy, offering a promising avenue for future multiferroic-based information technology.

Article Abstract

The discovery of various primary ferroic phases in atomically-thin van der Waals crystals have created a new two-dimensional wonderland for exploring and manipulating exotic quantum phases. It may also bring technical breakthroughs in device applications, as evident by prototypical functionalities of giant tunneling magnetoresistance, gate-tunable ferromagnetism and non-volatile ferroelectric memory etc. However, two-dimensional multiferroics with effective magnetoelectric coupling, which ultimately decides the future of multiferroic-based information technology, has not been realized yet. Here, we show that an unconventional magnetoelectric coupling mechanism interlocked with heterogeneous ferrielectric transitions emerges at the two-dimensional limit in van der Waals multiferroic CuCrPS with inherent antiferromagnetism and antiferroelectricity. Distinct from the homogeneous antiferroelectric bulk, thin-layer CuCrPS under external electric field makes layer-dependent heterogeneous ferrielectric transitions, minimizing the depolarization effect introduced by the rearrangements of Cu ions within the ferromagnetic van der Waals cages of CrS and PS octahedrons. The resulting ferrielectric phases are characterized by substantially reduced interlayer magnetic coupling energy of nearly 50% with a moderate electric field of 0.3 V nm, producing widely-tunable magnetoelectric coupling which can be further engineered by asymmetrical electrode work functions.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11001967PMC
http://dx.doi.org/10.1038/s41467-024-47373-7DOI Listing

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