AI Article Synopsis
- Magnetic tunnel junctions (MTJs) are essential for spintronic devices, and current writing methods use high-energy electric currents that waste energy.
- Using an electric field instead can reduce energy usage, and this study explores this potential in MgO-based MTJs with specialized anisotropic layers.
- The research shows significant control over resistance at room temperature through electric fields, providing a key advancement in the development of more efficient spintronic devices.
Article Abstract
Magnetic tunnel junctions (MTJs) are the core element of spintronic devices. Currently, the mainstream writing operation of MTJs is based on electric current with high energy dissipation, and it can be notably reduced if an electric field is used instead. In this regard, it is promising for electric field control of MTJ in the multiferroic heterostructure composed of MTJ and ferroelectrics via strain-mediated magnetoelectric coupling. However, there are only reports on MTJs with in-plane anisotropy so far. Here, we investigate electric field control of the resistance state of MgO-based perpendicular MTJs with easy-cone anisotropic free layers through strain-mediated magnetoelectric coupling in multiferroic heterostructures. A remarkable, nonvolatile, and reversible modulation of resistance at room temperature is demonstrated. Through local reciprocal space mapping under different electric fields for Pb(MgNb)TiO beneath the MTJ pillar, the modulation mechanism is deduced. Our work represents a crucial step toward electric field control of spintronic devices with non-in-plane magnetic anisotropy.
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Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC10997210 | PMC |
| http://dx.doi.org/10.1126/sciadv.adj8379 | DOI Listing |
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