Interfacial regulation is key to photocatalytic performance, yet modulating interfacial charge transfer in heterostructures remains challenging. Herein, a novel nanoflower-like FeP/ZnInS Ohm heterostructure is first designed, with Zn atoms in ZnInS (ZIS) acting as potential anchoring sites around P atoms, forming liganded Zn-P bonds. Combining 1D FeP nanowires and 2D ZIS nanosheets enhances the mobility of photogenerated electrons. The synergistic chain-type "electron pickup" mechanism of the Ohm heterojunction coupled with the Zn-P bond speeds up electron transport at the interface. The Ohm heterojunction initiates an internal electric field, creating a driving force to further transfer photogenerated electrons through the Zn-P rapid electron transport channel to FeP, which acts as a reservoir for active sites to release H. The optimized FeP/ZIS demonstrates a remarkable H evolution rate at 4.36 mmol h g, 3.6 times that of pristine ZIS. This work provides novel insights into optimizing photocarrier dynamics via interfacial microenvironment modulation.
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http://dx.doi.org/10.1016/j.jcis.2024.03.194 | DOI Listing |
J Colloid Interface Sci
July 2024
School of Environment, Nanjing Normal University, Jiangsu Engineering Lab of Water and Soil Eco-Remediation, Nanjing 210023, China; State Key Laboratory of Pollution Control and Resource Reuse, School of the Environment, Nanjing University, Nanjing 210023, China; Department of Chemical Engineering, Curtin University, GPO Box U1987, Perth, WA 6845, Australia. Electronic address:
Interfacial regulation is key to photocatalytic performance, yet modulating interfacial charge transfer in heterostructures remains challenging. Herein, a novel nanoflower-like FeP/ZnInS Ohm heterostructure is first designed, with Zn atoms in ZnInS (ZIS) acting as potential anchoring sites around P atoms, forming liganded Zn-P bonds. Combining 1D FeP nanowires and 2D ZIS nanosheets enhances the mobility of photogenerated electrons.
View Article and Find Full Text PDFMicromachines (Basel)
November 2023
Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou 310018, China.
RF PAs need to be reliable enough to protect them from damage under load mismatch conditions. This paper investigated the characteristics of GaAs heterojunction bipolar transistors (HBTs) under load mismatch conditions using a novel reverse wave injection technique to realize large VSWR ruggedness measurement with the circle centered at 50 Ohm and optimal impedance separately to analyze the device in real applications. With a real-time waveform measurement system, the RF voltage and current waveform information can be acquired, which provide a more-accurate view of what is occurring at the current generator plane of the HBT device.
View Article and Find Full Text PDFMolecules
September 2023
Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials, Ministry of Education, Shandong University, Jinan 250061, China.
Van der Waals heterojunctions of two-dimensional atomic crystals are widely used to build functional devices due to their excellent optoelectronic properties, which are attracting more and more attention, and various methods have been developed to study their structure and properties. Here, density functional theory combined with the nonequilibrium Green's function technique has been used to calculate the transport properties of graphene/WS heterojunctions. It is observed that the formation of heterojunctions does not lead to the opening of the Dirac point of graphene.
View Article and Find Full Text PDFRSC Adv
May 2019
Department of Materials and Chemical Engineering, Hanyang University South Korea
Ternary structures consisting of hollow g-CN nanofibers/MoS/sulfur, nitrogen-doped graphene and bulk g-CN (TCN) were designed as a dual layered film and fabricated using a spin-coating method. The first ternary structures were spin-coated on fluorine-doped tin oxide (FTO) glass, followed by spin-coating of g-CN film to form dual layers. We characterized the microstructural morphologies, chemical composition/bonding and optical properties of the dual layered film and observed significantly reduced recombination rates of photo-induced electron-hole pairs due to effective separation of the charge carriers.
View Article and Find Full Text PDFJ Nanosci Nanotechnol
October 2010
School of Electrical Engineering and Computer Science, Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-742, Republic of Korea.
We studied the effect of the buffer layer (molybdenum-oxide (MoO3)) thickness on the performance of organic solar cell based on blends of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61 butyric acid methyl ester fullerene derivative (PCBM). The thickness of MoO3 was varied from 1 nm to 30 nm for optimization of device performance. The photocurrent-voltage and impedance spectroscopy were measured under dark and AM1.
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