Mechanically exfoliated multilayer WS flakes are used as the channel of field effect transistors for low-power photodetection in the visible and near-infrared (NIR) spectral range. The electrical characterization as a function of the temperature reveals devices with n-type conduction and slightly different Schottky barriers at the drain and source contacts. The WS phototransistors can be operated in self-powered mode, yielding both a current and a voltage when exposed to light. The spectral photoresponse in the visible and the NIR ranges shows a high responsivity (4.5 μA/W) around 1250 nm, making the devices promising for telecommunication applications.

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http://www.ncbi.nlm.nih.gov/pmc/articles/PMC10963712PMC
http://dx.doi.org/10.1186/s11671-024-04000-0DOI Listing

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