AI Article Synopsis
- Selective area growth of GaN nanostructures was studied, focusing on the effects of temperature and ammonia flux during hydride vapor phase epitaxy.
- The research highlighted two growth behaviors in GaN nanowires, including a growth suppression issue that was resolved using a cyclic growth method.
- A theoretical model was created to explain this growth suppression and various GaN nanocrystal shapes were produced by balancing growth and blocking mechanisms based on temperature and vapor composition, leading to optimal conditions for 5 μm long nanowires.
Article Abstract
Selective area growth by hydride vapor phase epitaxy of GaN nanostructures with different shapes was investigated versus the deposition conditions including temperature and ammonia flux. Growth experiments were carried out on templates of GaN on sapphire masked with SiN. We discuss two occurrences related to axial and radial growth of GaN nanowires. A growth suppression phenomenon was observed under certain conditions, which was circumvented by applying the cyclic growth mode. A theoretical model involving inhibiting species was developed to understand the growth suppression phenomenon on the masked substrates. Various morphologies of GaN nanocrystals were obtained by controlling the competition between the growth and blocking mechanisms as a function of the temperature and vapor phase composition. The optimal growth conditions were revealed for obtaining regular arrays of ∼5m long GaN nanowires.
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| http://dx.doi.org/10.1088/1361-6528/ad3741 | DOI Listing |
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