Memristors integrated into a crossbar-array architecture (CAA) are promising candidates for analog in-memory computing accelerators. However, the relatively low reliability of the memristor device and sneak current issues in CAA remain the main obstacles. Alkali ion-based interface-type memristors are promising solutions for implementing highly reliable memristor devices and neuromorphic hardware. This interface-type device benefits from self-rectifying and forming-free resistive switching (RS), and exhibits relatively low variation from device to device and cycle to cycle. In a previous report, we introduced an in situ grown Na/TiO memristor using atomic layer deposition (ALD) and proposed a RS mechanism from experimentally measured Schottky barrier modulation. Self-rectifying RS characteristics were observed by the asymmetric distribution of Na dopants and oxygen vacancies as the Ti metal used as the adhesion layer for the bottom electrode diffuses over the Pt electrode at 250 °C during the ALD process and is doped into the TiO layer. Here, we theoretically verify the modulation of the Schottky barrier at the TiO/Pt electrode interface by Na ions. This study fabricated a Pt/Na/TiO/Pt memristor device and confirmed its self-rectifying RS characteristics and stable retention characteristics for 24 h at 85 °C. Additionally, this device exhibited relative standard deviations of 27 and 7% in the high and low resistance states, respectively, in terms of cycle-to-cycle variation. To verify the RS mechanism, we conducted density functional theory simulations to analyze the impact of Na cations at interstitial sites on the Schottky barrier. Our findings can contribute to both fundamental understanding and the design of high-performance memristor devices for neuromorphic computing.
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http://dx.doi.org/10.1021/acsami.3c19531 | DOI Listing |
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December 2024
School of Life Sciences, Shanghai University, Shanghai, 200444, P. R. China.
Plasmonic metasurfaces (PMs) exhibit extraordinary optical response due to surface lattice resonance, which is crucial for realizing high-performance photovoltaic device preparation. In this work, a nanopore confinement effect-mediated MOF@UsAu is proposed as a novel PM heterojunction for photovoltaic interfaces. 2D MOFs have the unique advantage of a tunable and ordered porous structure.
View Article and Find Full Text PDFMater Horiz
December 2024
School of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China.
The decoupling of electronic states between metals and semiconductors through controlled construction of artificial van der Waals (vdW) heterojunctions enables tailored Schottky barriers. However, the interfacial chemistry, especially involving solid-liquid interfaces, remains unexplored. Here, first principles calculations reveal unexpected strong Fermi-level pinning in various metal/MoS vdW heterojunctions with intercalated ice-like water bilayers.
View Article and Find Full Text PDFACS Nano
December 2024
Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology, Northeast Normal University, Ministry of Education, Changchun 130024, China.
Bilayer transition metal chalcogenides (TMDs) have gradually attracted a great deal of attention due to the higher density of states and carrier mobility than monolayer TMDs. Controlling the uniformity of the layer number is very crucial because it will intensively influence the physical properties. However, it is difficult to synthesize equal-bilayer (EB) TMDs with two identical layers via a normal layer-by-layer strategy.
View Article and Find Full Text PDFSmall
December 2024
State Key Laboratory of Advanced Processing and Recycling of Nonferrous Metals, Lanzhou University of Technology, Lanzhou, 730050, China.
Carbon-based hole transport layer (HTL)-free perovskite solar cells (C-PSCs) receive a lot of attention because of their simplified preparation technology, low price, and good hydrophobicity. However, the Schottky junction formed at the interface between perovskite and carbon poles affects the photogenerated carrier extraction and conversion efficiency. In this paper, 4-trifluoromethyl-2-pyridinecarboxylic acid (TPCA) is used to modify the perovskite films.
View Article and Find Full Text PDFThe mechanical, thermal and dynamical stabilities, electronic structure, contact type, and height of the barrier at the interface of TaX (X = S, Se, Te) and BY (Y = P, As, Sb) metal-semiconductor (MS) contact are investigated first principles calculations. Binding energies, mechanical properties, phonon spectra and molecular dynamics (AIMD) simulations confirm the stabilities of these systems. TaX-BY (X = S, Se, Te; Y = P, As, Sb) MS van der Waals heterostructures (vdWHs) are found to be metal with a Schottky contact at the interface.
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