Back Interface and Absorber Bulk Deep-Level Trap Optimization Enables Highly Efficient Flexible Antimony Triselenide Solar Cell.

Adv Sci (Weinh)

Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China.

Published: June 2024

The unique 1D crystal structure of Antimony Triselenide (SbSe) offers notable potential for use in flexible, lightweight devices due to its excellent bending characteristics. However, fabricating high-efficiency flexible SbSe solar cells is challenging, primarily due to the suboptimal contact interface between the embedded SbSe layer and the molybdenum back-contact, compounded by complex intrinsic defects. This study introduces a novel Molybdenum Trioxide (MoO) interlayer to address the back contact interface issues in flexible SbSe devices. Further investigations indicate that incorporating a MoO interlayer not only enhances the crystalline quality but also promotes a favorable [hk1] growth orientation in the SbSe absorber layer. It also reduces the barrier height at the back contact interface and effectively passivates harmful defects. As a result, the flexible SbSe solar cell, featuring a Mo-foil/Mo/MoO/SbSe/CdS/ITO/Ag substrate structure, demonstrates exceptional flexibility and durability, enduring large bending radii and multiple bending cycles while achieving an impressive efficiency of 8.23%. This research offers a straightforward approach to enhancing the performance of flexible SbSe devices, thereby expanding their application scope in the field of photovoltaics.

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http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11165550PMC
http://dx.doi.org/10.1002/advs.202310193DOI Listing

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