2D Air-Stable Nonlayered Ferrimagnetic FeCrS Crystals Synthesized via Chemical Vapor Deposition.

Adv Mater

Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, China.

Published: June 2024

AI Article Synopsis

  • The discovery of a new 2D ferrimagnetic crystal, FeCrS, synthesized with high purity, shows promise for use in spintronic devices.
  • The crystal exhibits unique magnetic properties, including perpendicular magnetic anisotropy, and its Curie temperature remains constant regardless of thickness.
  • Its exceptional air-stability and robust magnetic characteristics make 2D FeCrS an appealing candidate for future technological applications.

Article Abstract

The discovery of intrinsic 2D magnetic materials has opened up new opportunities for exploring magnetic properties at atomic layer thicknesses, presenting potential applications in spintronic devices. Here a new 2D ferrimagnetic crystal of nonlayered FeCrS is synthesized with high phase purity using chemical vapor deposition. The obtained 2D FeCrS exhibits perpendicular magnetic anisotropy, as evidenced by the out-of-plane/in-plane Hall effect and anisotropic magnetoresistance. Theoretical calculations further elucidate that the observed magnetic anisotropy can be attributed to its surface termination structure. By combining temperature-dependent magneto-transport and polarized Raman spectroscopy characterizations, it is discovered that both the measured Curie temperature and the critical temperature at which a low energy magnon peak disappeared remains constant, regardless of its thickness. Magnetic force microscopy measurements show the flipping process of magnetic domains. The exceptional air-stability of the 2D FeCrS is also confirmed via Raman spectroscopy and Hall hysteresis loops. The robust anisotropic ferrimagnetism, the thickness-independent of Curie temperature, coupled with excellent air-stability, make 2D FeCrS crystals highly attractive for future spintronic devices.

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Source
http://dx.doi.org/10.1002/adma.202401338DOI Listing

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