Two-dimensional van der Waals (vdW) magnetic materials hold promise for the development of high-density, energy-efficient spintronic devices for memory and computation. Recent breakthroughs in material discoveries and spin-orbit torque control of vdW ferromagnets have opened a path for integration of vdW magnets in commercial spintronic devices. However, a solution for field-free electric control of perpendicular magnetic anisotropy (PMA) vdW magnets at room temperatures, essential for building compact and thermally stable spintronic devices, is still missing. Here, we report a solution for the field-free, deterministic, and nonvolatile switching of a PMA vdW ferromagnet, FeGaTe, above room temperature (up to 320 K). We use the unconventional out-of-plane anti-damping torque from an adjacent WTe layer to enable such switching with a low current density of 2.23 × 10 A cm. This study exemplifies the efficacy of low-symmetry vdW materials for spin-orbit torque control of vdW ferromagnets and provides an all-vdW solution for the next generation of scalable and energy-efficient spintronic devices.
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http://dx.doi.org/10.1126/sciadv.adk8669 | DOI Listing |
ACS Nano
January 2025
School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Guangdong518172, China.
The hybrid magnetic heterostructures and superlattices, composed of organic and inorganic materials, have shown great potential for quantum computing and next-generation information technology. Organic materials generally possess designable structural motifs and versatile optical, electronic, and magnetic properties, but are too delicate for robust integration into solid-state devices. In contrast, inorganic systems provide robust solid-state interface and excellent electronic properties but with limited customization space.
View Article and Find Full Text PDFAdv Mater
January 2025
Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, Hunan, 410082, China.
The exchange bias (EB) effect is a fundamental magnetic phenomenon, in which the exchange bias field/coercive field ratio (|H/H|) can improve the stability of spintronic devices. Two-dimensional (2D) magnetic heterostructures have the potential to construct low-power and high-density spintronic devices, while their typically air unstable and |H/H| lesser, limiting the possibility of applications. Here, 2D CrTe nanosheets have been systematically synthesized with an in situ formed ≈2 nm-thick Te doped CrO layer (Te-CrO) on the upper surface by chemical vapor deposition (CVD) method.
View Article and Find Full Text PDFAdv Mater
January 2025
Department of Physics, University of Calcutta, 92 A.P.C. Road, Kolkata, 700009, India.
Supercapacitors are rapidly gaining attention as next-generation energy storage devices due to their superior power and energy densities. This study pioneers the investigation of Mn/Zn co-doping in α-Cu₂V₂O₇ (CVO) to enhance its performance as a supercapacitor electrode material. Structural and local Structural properties of Mn/Zn co-doped CVO have been investigated through X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), X-ray Photoelectron Spectroscopy (XPS), and X-ray Absorption Spectroscopy (XAS), revealing significant distortions that enhance supercapacitor performance.
View Article and Find Full Text PDFAdv Mater
January 2025
Department of Electrical and Computer Engineering, and Department of Physics and Astronomy, University of California, Los Angeles, CA, 90095, USA.
In the burgeoning field of spintronics, antiferromagnetic materials (AFMs) are attracting significant attention for their potential to enable ultra-fast, energy-efficient devices. Thin films of AFMs are particularly promising for practical applications due to their compatibility with spin-orbit torque (SOT) mechanisms. However, studying these thin films presents challenges, primarily due to the weak signals they produce and the rapid dynamics driven by SOT, that are too fast for conventional electric transport or microwave techniques to capture.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
School of Physical Sciences, Indian Association for the Cultivation of Science, 2A & 2B Raja S. C. Mullick Road, Kolkata 700032, India.
Materials exhibiting topological transport properties, such as a large topological Hall resistivity, are crucial for next-generation spintronic devices. Here, we report large topological Hall resistivities in epitaxial supermalloy (NiFeMo) thin films with [100] and [111] orientations grown on single-crystal MgO (100) and AlO (0001) substrates, respectively. While X-ray reciprocal maps confirmed the epitaxial growth of the films, X-ray stress analyses revealed large residual strains in the films, inducing tetragonal distortions of the cubic NiFeMo unit cells.
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