Silicon-germanium (SiGe) alloy nanocrystals (NCs) are promising for advanced optoelectronic applications due to their highly tunable composition and photophysical behaviors. The homogenous dispersion of Si and Ge atoms on the surfaces of SiGe NCs adds a degree of freedom for manipulating the surface chemistry of this type of alloy material. However, the difference in the reactivity between Si and Ge atoms brings additional difficulty in selecting appropriate surface ligands to passivate SiGe NCs. Here we report a mixed-ligand functionalization approach to passivate SiGe NCs effectively. Octadecene and oleylamine molecules serve as co-ligands to cap the surface Si and Ge atoms, respectively, yielding colloidally stable SiGe NCs with high solution dispersity and stable intrinsic near-infrared emission with a microsecond-scale lifetime decay. The resulting particles also show improved hole and electron mobilities of up to 1.1 × 10 cm V s and 6.3 × 10 cm V s, 2.2 and 1.2 times improvement over the particles only passivated by octadecene ligands.
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http://dx.doi.org/10.1039/d3nr06008j | DOI Listing |
Nanoscale
March 2024
MOE Laboratory of Bioinorganic and Synthetic Chemistry, Lehn Institute of Functional Materials, School of Chemistry, IGCME, Sun Yat-sen University, Guangzhou 510275, China.
Silicon-germanium (SiGe) alloy nanocrystals (NCs) are promising for advanced optoelectronic applications due to their highly tunable composition and photophysical behaviors. The homogenous dispersion of Si and Ge atoms on the surfaces of SiGe NCs adds a degree of freedom for manipulating the surface chemistry of this type of alloy material. However, the difference in the reactivity between Si and Ge atoms brings additional difficulty in selecting appropriate surface ligands to passivate SiGe NCs.
View Article and Find Full Text PDFMaterials (Basel)
November 2021
Department of Materials Science, Transylvania University of Brasov, 29 Eroilor, 500036 Brasov, Romania.
Group IV nanocrystals (NCs), in particular from the Si-Ge system, are of high interest for Si photonics applications. Ge-rich SiGe NCs embedded in nanocrystallized HfO were obtained by magnetron sputtering deposition followed by rapid thermal annealing at 600 °C for nanostructuring. The complex characterization of morphology and crystalline structure by X-ray diffraction, μ-Raman spectroscopy, and cross-section transmission electron microscopy evidenced the formation of Ge-rich SiGe NCs (3-7 nm diameter) in a matrix of nanocrystallized HfO.
View Article and Find Full Text PDFSci Rep
February 2020
National Institute of Materials Physics, Atomistilor 405A, 077125, Magurele, Romania.
Films of SiGe nanocrystals (NCs) in oxide have the advantage of tuning the energy band gap by adjusting SiGe NCs composition and size. In this study, SiGe-SiO amorphous films were deposited by magnetron sputtering on Si substrate followed by rapid thermal annealing at 700, 800 and 1000 °C. We investigated films with Si:Ge:SiO compositions of 25:25:50 vol.
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