Variegation and complexity of polarization relaxation loss in many heterostructured materials provide available mechanisms to seek a strong electromagnetic wave (EMW) absorption performance. Here we construct a unique heterostructured compound that bonds α-FeO nanosheets of the (110) plane on carbon microtubes (CMTs). Through effective alignment between the Fermi energy level of CMTs and the conduction band position of α-FeO nanosheets at the interface, we attain substantial polarization relaxation loss via novel atomic valence reversal between Fe(III) ↔ Fe(III) induced with periodic electron injection from conductive CMTs under EMW irradiation to give α-FeO nanosheets. Such heterostructured materials possess currently reported minimum reflection loss of -84.01 dB centered at 10.99 GHz at a thickness of 3.19 mm and an effective absorption bandwidth (reflection loss ≤ -10 dB) of 7.17 GHz (10.83-18 GHz) at 2.65 mm. This work provides an effective strategy for designing strong EMW absorbers by combining highly efficient electron injection and atomic valence reversal.
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http://dx.doi.org/10.1021/acs.nanolett.4c00532 | DOI Listing |
J Phys Chem B
January 2025
Department of Chemistry, Kansas State University, Manhattan, Kansas 66506, United States.
Ion atmospheres play a critical role in modulating the interactions between charged components in solutions. However, a detailed description of the nature of ion atmospheres remains elusive. Here, we use Kirkwood-Buff theory, an exact theory of solution mixtures, together with a series of local and bulk electroneutrality constraints to provide relationships between all the net ion-ion distributions in bulk electrolyte mixtures.
View Article and Find Full Text PDFSmall
January 2025
School of Materials and Chemistry, University of Shanghai for Science and Technology, Shanghai, 200093, P. R. China.
Chlorophenols are difficult to degrade and mineralize by traditional advanced oxidation processes due to the strong electronegativity of chlorine. Here, a dual-site atomically dispersed catalyst (FeMoNC) is reported, which Fe/Mo supported on mesoporous nitrogen-doped carbon is prepared through high-temperature migration. The FeMoNC exhibits a high dechlorination rate of 93.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
Grundlagen von Energiematerialien, Institut für Physik, Technische Universität Ilmenau, 98693 Ilmenau, Germany.
To date, III-V semiconductor-based tandem devices with GaInP top photoabsorbers show the highest solar-to-electricity or solar-to-fuel conversion efficiencies. In photoelectrochemical (PEC) cells, however, III-V semiconductors are sensitive, in terms of photochemical stability and, therefore, require suitable functional layers for electronic and chemical passivation. GaN films are discussed as promising options for this purpose.
View Article and Find Full Text PDFACS Nano
January 2025
IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120, United States.
Lanthanide atoms show long magnetic lifetimes because of their strongly localized 4 electrons, but electrical control of their spins has been difficult because of their closed valence shell configurations. We achieved electron spin resonance of individual lanthanide atoms using a scanning tunneling microscope to probe the atoms bound to a protective insulating film. The atoms on this surface formed a singly charged cation state having an unpaired 6 electron, enabling tunnel current to access their 4 electrons.
View Article and Find Full Text PDFJ Phys Condens Matter
January 2025
AIMR, Tohoku University, 2-1-1, Katahira, Aoba-ku, Sendai, 980-8578, JAPAN.
Monolayer atomic thin films of group-V elements have a high potential for application in spintronics and valleytronics because of their unique crystal structure and strong spin-orbit coupling. We fabricated Sb and Bi monolayers on a SiC(0001) substrate by the molecular-beam-epitaxy method and studied the electronic structure by angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations. The fabricated Sb film shows the (√3×√3)R30º superstructure associated with the formation of ⍺-Sb, and exhibits a semiconducting nature with a band gap of more than 1.
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