Creating a high-frequency electron system demands a high saturation velocity (υ). Herein, we report the high-field transport properties of multilayer van der Waals (vdW) indium selenide (InSe). The InSe is on a hexagonal boron nitride substrate and encapsulated by a thin, noncontinuous In layer, resulting in an impressive electron mobility reaching 2600 cm/(V s) at room temperature. The high-mobility InSe achieves υ exceeding 2 × 10 cm/s, which is superior to those of other gapped vdW semiconductors, and exhibits a 50-60% improvement in υ when cooled to 80 K. The temperature dependence of υ suggests an optical phonon energy (ω) for InSe in the range of 23-27 meV, previously reported values for InSe. It is also notable that the measured υ values exceed what is expected according to the optical phonon emission model due to weak electron-phonon scattering. The superior υ of our InSe, despite its relatively small ω, reveals its potential for high-frequency electronics, including applications to control cryogenic quantum computers in close proximity.

Download full-text PDF

Source
http://dx.doi.org/10.1021/acsnano.3c11613DOI Listing

Publication Analysis

Top Keywords

high saturation
8
saturation velocity
8
indium selenide
8
optical phonon
8
inse
6
high-field electron
4
electron transport
4
transport high
4
velocity multilayer
4
multilayer indium
4

Similar Publications

Are we prematurely predicting acute mountain sickness?

Exp Physiol

January 2025

Integrative Cerebrovascular and Environmental Physiology SB Laboratory, University of Guelph, Guelph, Ontario, Canada.

View Article and Find Full Text PDF

Background: Heart failure (HF) is a significant global health problem, affecting approximately 64.34 million people worldwide. The worsening of HF, also known as HF decompensation, is a major factor behind hospitalizations, contributing to substantial health care costs related to this condition.

View Article and Find Full Text PDF

We developed a two-transistor, zero-capacitor (2T0C) gain-cell memory featuring a self-aligned top-gate-structured thin-film transistor (TFT) for the first time. The proposed indium tin zinc oxide (ITZO) channel-incorporated architecture was specifically engineered to minimize parasitic capacitance for achieving long-retention 2T0C memory operations. A typical 2T0C structure features five types of parasitic capacitances; however, the proposed SATG design effectively used an essential gate insulator capacitance ( ) and reduced four nonessential capacitances ( , , , and ) to virtually zero.

View Article and Find Full Text PDF

Magnetic activated carbon (MAC) derived from agricultural waste shows significant potential for the removal of norfloxacin (NOR) from wastewater. However, understanding the removal mechanisms, efficiency, and recyclability of MAC produced from walnut green husk and ferrocene for NOR remains a challenge. In this study, walnut green husk-based MAC (HQP-MC) was synthesized, and changes in surface functionality, mechanisms for NOR removal, and major influencing factors were investigated.

View Article and Find Full Text PDF

Midterm Outcomes of Endovascular Pulmonary Artery Debanding in Children.

Catheter Cardiovasc Interv

January 2025

Department of Pediatric Cardiology, Hotel Dieu de France University Medical Center, Saint Joseph University, Beirut, Lebanon.

Background: Pulmonary artery banding (PAB) palliates pulmonary over-circulation, while endovascular debanding (ED) offers a less invasive alternative to repeat surgery.

Objectives: To evaluate our experience with ED.

Aims: Retrospective review of single-center data (2015-2023) on children with single, multiple, or "Swiss-cheese" muscular ventricular septal defects (MVSDs) undergoing ED.

View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!