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Defect-Assisted Exciton Transfer across the Tetracene-Si(111):H Interface. | LitMetric

Defect-Assisted Exciton Transfer across the Tetracene-Si(111):H Interface.

Phys Rev Lett

Lehrstuhl für Theoretische Materialphysik, Universität Paderborn, 33095 Paderborn, Germany.

Published: February 2024

AI Article Synopsis

  • Exciton transfers are crucial processes in various materials but often lack thorough understanding.
  • Recent research focused on triplet exciton transfer in tetracene-sensitized silicon solar cells, highlighting its potential for capturing high-energy photons.
  • Findings from molecular dynamics simulations reveal that instead of hindering transfer, silicon dangling bonds can actually enhance exciton transfer, indicating that defects at interfaces could be beneficial for excitation processes.

Article Abstract

Exciton transfers are ubiquitous and extremely important processes, but often poorly understood. A recent example is the triplet exciton transfer in tetracene sensitized silicon solar cells exploited for harvesting high-energy photons. The present ab initio molecular dynamics calculations for tetracene-Si(111):H interfaces show that Si dangling bonds, intuitively expected to hinder the exciton transfer, actually foster it. This suggests that defects and structural imperfections at interfaces may be exploited for excitation transfer.

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Source
http://dx.doi.org/10.1103/PhysRevLett.132.076201DOI Listing

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