AI Article Synopsis

  • The study investigates the infrared photoresponse of photodetectors made from InP nanowires containing InAsP quantum discs, focusing on their effectiveness at absorbing long-wavelength infrared light.
  • It highlights the use of a very thin indium tin oxide layer and a new photogating mechanism that boosts sensitivity compared to traditional detectors.
  • The research also involves complex simulations to understand the electronic properties of the quantum discs, including how defects and strain affect their performance in producing clear signals.

Article Abstract

Here we report on an experimental and theoretical investigation of the long-wavelength infrared (LWIR) photoresponse of photodetectors based on arrays of three million InP nanowires with axially embedded InAsP quantum discs. An ultra-thin top indium tin oxide contact combined with a novel photogating mechanism facilitates an improved LWIR normal incidence sensitivity in contrast to traditional planar quantum well photodetectors. The electronic structure of the quantum discs, including strain and defect-induced photogating effects, and optical transition matrix elements were calculated by an 8-band·simulation along with solving drift-diffusion equations to unravel the physics behind the generation of narrow linewidth intersubband signals observed from the quantum discs.

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Source
http://dx.doi.org/10.1088/1361-6528/ad2bd0DOI Listing

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