Interfacial engineering eliminates energy loss at perovskite/HTL junction.

Chem Commun (Camb)

Hebei Key Laboratory of Photoelectric Control on Surface and Interface, College of Science, Hebei University of Science and Technology, Shijiazhuang 050018, China.

Published: March 2024

Realizing efficient FAPbI-based devices with high open-circuit voltage () is still challenging, due to severe energy loss between the n-type perovskite and p-type hole-transporting layer (HTL). Here, we developed a strategy involving controlling the formation of iodine vacancies in order to induce formation of p-type perovskite and hence mitigate such energy loss. Post-deposition of -butylamine iodide was discovered to induce an n-to-p-type transition in the FAPbI perovskite and hence form the p-type perovskite/p-type HTL junction. The resultant device realized a of as high as 1.12 V, a value ∼14.3% higher than that of the corresponding n-type FAPbI device (0.98 V).

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http://dx.doi.org/10.1039/d3cc05572hDOI Listing

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