The flexoelectric effect, as a novel form of the electromechanical coupling phenomenon, has attracted significant attention in the fields of materials science and electronic devices. It refers to the interaction between strain gradients and electric dipole moments or electric field intensity gradients and strain. In contrast to the traditional piezoelectric effect, the flexoelectric effect is not limited by material symmetry or the Curie temperature and exhibits a stronger effect at the nanoscale. The flexoelectric effect finds widespread applications ranging from energy harvesting to electronic device design. Utilizing the flexoelectric effect, enhanced energy harvesters, sensitive sensors, and high-performance wearable electronic devices can be developed. Additionally, the flexoelectric effect can be utilized to modulate the optoelectronic properties and physical characteristics of materials, holding the potential for significant applications in areas such as optoelectronic devices, energy storage devices, and flexible electronics. This review provides a comprehensive overview of the historical development, measurement of flexoelectric coefficients, enhancement mechanisms, and current research progress of the flexoelectric effect. Additionally, it offers a perspective on future prospects of the flexoelectric effect.
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http://dx.doi.org/10.1021/acsami.3c16727 | DOI Listing |
Adv Sci (Weinh)
January 2025
Jožef Stefan Institute, Ljubljana, 1000, Slovenia.
The recent discovery of ferroelectric nematic liquid crystalline phases marks a major breakthrough in soft matter research. An intermediate phase, often observed between the nonpolar and the ferroelectric nematic phase, shows a distinct antiferroelectric response to electric fields. However, its structure and formation mechanisms remain debated, with flexoelectric and electrostatics effects proposed as competing mechanisms.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
School of Information Science and Technology, Northwest University, Xi'an 710127, China.
Designing and discovering superior type-II band alignment are crucial for advancing optoelectronic device technologies. Here, we employ first-principles calculations to investigate the evolution of band edges in monolayer MoS, boron phosphide (BP), and MoS/BP heterostructures before and after their rolling into nanotubes. Our research results indicate that the intrinsic MoS/BP vertical heterostructures exhibit a type-II direct bandgap, but this feature is not robust under strain.
View Article and Find Full Text PDFAdv Sci (Weinh)
December 2024
Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China.
Flexoelectric coefficient is a tetradic and its introduction enables centrosymmetric materials to exhibit piezoelectricity. However, the flexoelectric paradigm currently lacks a strategy to effectively tune the strain gradient for optimal electro-mechanical coupling. This study proposes a quantized collision model accessible through ionic irradiation technology to explore the flexoelectricity and precisely modulate the strain gradient.
View Article and Find Full Text PDFLangmuir
December 2024
Department of Chemistry and Physics of Materials, Paris-Lodron University Salzburg, Jakob-Haringer-Straße 2a, A-5020 Salzburg, Austria.
Chemical transformations at metal oxide interfaces that are triggered by mechanical energy set the basis for applications in the fields of tribo- and mechanochemistry, ceramic and composite processing, and piezoelectric devices. We investigated the early stages of tribochemically initiated radical chemistry of structurally well-defined TiO and BaTiO nanoparticles in argon or in oxygen atmosphere. Electron paramagnetic resonance spectroscopy enabled the determination of the chemical nature and concentration of paramagnetic surface species which form upon uniaxial powder compaction at room temperature.
View Article and Find Full Text PDFACS Appl Mater Interfaces
December 2024
Intelligent Materials Lab, School of Physics and Materials Science, Nanchang University, Nanchang 330031, People's Republic of China.
Interface effects and strain engineering have emerged as critical strategies for modulating polarization and internal electric fields in ferroelectric materials, playing a vital role in exploring coupling mechanisms and developing ferroelectric diode devices. In this study, we selected BiFeO as a representative ferroelectric material and utilized interface engineering to control its polarization. By precisely manipulating the atomic stacking sequence at the interface, we influenced the electrostatic potential step across the interface, resulting in a bias voltage in the ferroelectric hysteresis loops that defined the ferroelectric state.
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