β-GaO photodetectors have the advantages of low dark current and strong radiation resistance in UV detection. However, the limited photocurrent has restricted their applications. Herein, MSM UV photodetectors based on (InGa)O (x = 0, 0.1, 0.2, 0.3) by a sol-gel method were fabricated and studied. The doping of indium ions in GaO leads to lattice distortion and promotes the formation of oxygen vacancies. The oxygen vacancies in (InGa)O can be modulated by various proportions of indium, and the increased oxygen vacancies contribute to the enhancement of electron concentration. The results show that the amorphous InGaO photodetector exhibited improved performances, including a high light-to-dark current ratio (2.8 × 10) and high responsivity (739.2 A/W). This work provides a promising semiconductor material InGaO for high-performance MSM UV photodetectors.

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http://www.ncbi.nlm.nih.gov/pmc/articles/PMC10857313PMC
http://dx.doi.org/10.3390/s24030787DOI Listing

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