Severity: Warning
Message: file_get_contents(https://...@pubfacts.com&api_key=b8daa3ad693db53b1410957c26c9a51b4908&a=1): Failed to open stream: HTTP request failed! HTTP/1.1 429 Too Many Requests
Filename: helpers/my_audit_helper.php
Line Number: 176
Backtrace:
File: /var/www/html/application/helpers/my_audit_helper.php
Line: 176
Function: file_get_contents
File: /var/www/html/application/helpers/my_audit_helper.php
Line: 250
Function: simplexml_load_file_from_url
File: /var/www/html/application/helpers/my_audit_helper.php
Line: 3122
Function: getPubMedXML
File: /var/www/html/application/controllers/Detail.php
Line: 575
Function: pubMedSearch_Global
File: /var/www/html/application/controllers/Detail.php
Line: 489
Function: pubMedGetRelatedKeyword
File: /var/www/html/index.php
Line: 316
Function: require_once
MgZnO/MgZnO double layer structure UV detectors are made on single structure MgO substrate by PLD method, and the effect of different thickness top MgZnO layer on the UV response characteristics of the detector are studied. Compared with the single layer MgZnO detector that made by MgZnO target, the MgZnO/MgZnO double layer detector with 30 nm top layer, shows much higher deep UV response (21.3 A Wat 265 nm), much smaller dark current(66.9 pA) and much higher signal-to-noise ratio (2.8 × 10) at 25 V bias voltage. And the device also shows relative high response (23.1 A W) at 235 nm deep UV light at 25 V bias voltage, which is mainly attributed by the bottom MgZnO layer with higher Mg composition. When the top layer is 66.7 nm thick, the response of the MgZnO/MgZnO detector reached 228.8 A Wat 255 nm under 25 V bias voltage, the signal-to-noise ratio of which is 10573 under 20 V bias voltage, and the near UV response of the device is also big because of more h-MgZnO in top MgZnO layer. When the top layer reached 90.2 nm, there are much more h-MgZnO in the top MgZnO layer, the peak response of the MgZnO/MgZnO detector is just 6.65 A Wat 320 nm under 25 V bias voltage, the signal-to-noise ratio of which is 1248. The high Mg composition bottom MgZnO decrease the dark current of the MgZnO/MgZnO detector, both the 2DEG effect of the double layer structure and the amplify effect of the mix-phase MgZnO top layer, increased theand deep UV response of the MgZnO/MgZnO detector. Therefore, the double layer MgZnO/MgZnO detector is more sensitive at faint deep UV light compared with previous reported MgZnO detectors, and the MgZnO/MgZnO detector shows similarand signal-noise-ratio at faint deep UV light as high-temperature fabricated AlGaN/AlGaN detectors.
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Source |
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http://dx.doi.org/10.1088/1361-6528/ad2813 | DOI Listing |
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