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High performance solar-blind UV detector with MgZnO/MgZnO double layer structure on MgO substrate. | LitMetric

High performance solar-blind UV detector with MgZnO/MgZnO double layer structure on MgO substrate.

Nanotechnology

College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen, 518060, People's Republic of China.

Published: March 2024

AI Article Synopsis

  • Researchers created MgZnO/MgZnO double layer UV detectors on a MgO substrate using pulsed laser deposition (PLD) and explored how varying the thickness of the top MgZnO layer affects detection performance.
  • The 30 nm thick top layer significantly improved deep UV response (21.3 A/W at 265 nm) and reduced dark current (66.9 pA), offering a better signal-to-noise ratio (2.8 × 10) at 25 V compared to a single layer detector.
  • As the top layer thickness increased to 66.7 nm, the response peaked at 228.8 A/W at 255 nm, but it dropped to 6.65 A/W at

Article Abstract

MgZnO/MgZnO double layer structure UV detectors are made on single structure MgO substrate by PLD method, and the effect of different thickness top MgZnO layer on the UV response characteristics of the detector are studied. Compared with the single layer MgZnO detector that made by MgZnO target, the MgZnO/MgZnO double layer detector with 30 nm top layer, shows much higher deep UV response (21.3 A Wat 265 nm), much smaller dark current(66.9 pA) and much higher signal-to-noise ratio (2.8 × 10) at 25 V bias voltage. And the device also shows relative high response (23.1 A W) at 235 nm deep UV light at 25 V bias voltage, which is mainly attributed by the bottom MgZnO layer with higher Mg composition. When the top layer is 66.7 nm thick, the response of the MgZnO/MgZnO detector reached 228.8 A Wat 255 nm under 25 V bias voltage, the signal-to-noise ratio of which is 10573 under 20 V bias voltage, and the near UV response of the device is also big because of more h-MgZnO in top MgZnO layer. When the top layer reached 90.2 nm, there are much more h-MgZnO in the top MgZnO layer, the peak response of the MgZnO/MgZnO detector is just 6.65 A Wat 320 nm under 25 V bias voltage, the signal-to-noise ratio of which is 1248. The high Mg composition bottom MgZnO decrease the dark current of the MgZnO/MgZnO detector, both the 2DEG effect of the double layer structure and the amplify effect of the mix-phase MgZnO top layer, increased theand deep UV response of the MgZnO/MgZnO detector. Therefore, the double layer MgZnO/MgZnO detector is more sensitive at faint deep UV light compared with previous reported MgZnO detectors, and the MgZnO/MgZnO detector shows similarand signal-noise-ratio at faint deep UV light as high-temperature fabricated AlGaN/AlGaN detectors.

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Source
http://dx.doi.org/10.1088/1361-6528/ad2813DOI Listing

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