Presynthesized perovskite quantum dots are very promising for making films with different compositions, as they decouple crystallization and film-formation processes. However, fabricating large-area uniform films using perovskite quantum dots is still very challenging due to the complex fluidic dynamics of the solvents. Here, we report a robust film-formation approach using an environmental-friendly binary-solvent strategy. Nonbenzene solvents, n-octane and n-hexane, are mixed to manipulate the fluidic and evaporation dynamics of the perovskite quantum dot inks, resulting in balanced Marangoni flow, enhanced ink spreadability, and uniform solute-redistribution. We can therefore blade-coat large-area uniform perovskite films with different compositions using the same fabrication parameters. White and red perovskite light-emitting diodes incorporating blade-coated films exhibit a decent external quantum efficiency of 10.6% and 15.3% (0.04 cm), and show a uniform emission up to 28 cm. This work represents a significant step toward the application of perovskite light-emitting diodes in flat panel solid-state lighting.
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http://dx.doi.org/10.1038/s41467-024-45488-5 | DOI Listing |
Natl Sci Rev
January 2025
Division of Advanced Materials Engineering, College of Engineering, Research Center for Advanced Materials Development (RCAMD), Jeonbuk National University (JBNU), Jeonju 54896, South Korea.
Ever-increasing demand for efficient optoelectronic devices with a small-footprinted on-chip light emitting diode has driven their expansion in self-emissive displays, from micro-electronic displays to large video walls. InGaN nanowires, with features like high electron mobility, tunable emission wavelengths, durability under high current densities, compact size, self-emission, long lifespan, low-power consumption, fast response, and impressive brightness, are emerging as the choice of micro-light emitting diodes (µLEDs). However, challenges persist in achieving high crystal quality and lattice-matching heterostructures due to composition tuning and bandgap issues on substrates with differing crystal structures and high lattice mismatches.
View Article and Find Full Text PDFSmall Methods
January 2025
Wide-bandgap semiconductors (WBGS) with energy bandgaps larger than 3.4 eV for GaN and 3.2 eV for SiC have gained attention for their superior electrical and thermal properties, which enable high-power, high-frequency, and harsh-environment devices beyond the capabilities of conventional semiconductors.
View Article and Find Full Text PDFLight Sci Appl
January 2025
Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, China.
Perovskite quantum dots (PQDs) show promise in light-emitting diodes (LEDs). However, near-infrared (NIR) LEDs employing PQDs exhibit inferior external quantum efficiency related to the PQD emitting in the visible range. One fundamental issue arises from the PQDs dynamic surface: the ligand loss and ions migration to the interfacial sites serve as quenching centers, resulting in trap-assisted recombination and carrier loss.
View Article and Find Full Text PDFEnviron Sci Technol
January 2025
School of Environmental Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
Emerging mercury-free ultraviolet (UV) sources, such as krypton chloride excimer (KrCl*) lamps and UV light emitting diodes (UV-LEDs), emit diverse wavelengths with distinct inactivation mechanisms. The combined application has the potential to improve disinfection effectiveness through synergism. In this study, a mini-fluidic photoreaction system equipped with a KrCl* lamp (222 nm) and a strip of UV-LEDs (275 nm) was developed, which could individually/simultaneously deliver accurate UV radiation(s) at 222 nm (0.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
Department of Photonics and Nanoelectronics, and BK21 FOUR ERICA-ACE Center, Hanyang University, Ansan 15588, Korea.
Colloidal quantum-dot light-emitting diodes (QD-LEDs) have been significantly improved in terms of device performance and lifetime by employing zinc oxide (ZnO) as an electron transport layer (ETL). Although atomic layer deposition (ALD) allows fabrication of uniform, high-quality ZnO films with minimal defects, the high conductivity of ZnO has hindered its straightforward application as an ETL in QD-LEDs. Herein, we propose fabrication of Al-doped ZnMgO (Al:ZnMgO) ETLs for QD-LEDs through a supercycle ALD, with alternating depositions of various metal oxides.
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