Graphene-covered hexagonal SiC substrates have been frequently discussed to be appropriate starting points for epitaxial overlayers of Xenes, such as plumbene, or even their deposition as intercalates between graphene and SiC. Here, we investigate, within density functional theory, the plumbene deposition for various layer orderings and substrate terminations. By means of total energy studies we demonstrate the favorization of the intercalation versus the epitaxy for both C-terminated and Si-terminated 4H-SiC substrates. These results are explained in terms of chemical bonding and by means of layer-resolved projected band structures. Our results are compared with available experimental findings.
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http://dx.doi.org/10.1038/s41598-024-53067-3 | DOI Listing |
Sci Rep
February 2024
Department of Physics and INFN, University of Rome Tor Vergata, Via della Ricerca 1, I-00133, Rome, Italy.
Graphene-covered hexagonal SiC substrates have been frequently discussed to be appropriate starting points for epitaxial overlayers of Xenes, such as plumbene, or even their deposition as intercalates between graphene and SiC. Here, we investigate, within density functional theory, the plumbene deposition for various layer orderings and substrate terminations. By means of total energy studies we demonstrate the favorization of the intercalation versus the epitaxy for both C-terminated and Si-terminated 4H-SiC substrates.
View Article and Find Full Text PDFAdv Sci (Weinh)
June 2023
Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 300, Taiwan.
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