Optoelectronic integrated circuits (OEICs) have enhanced integration and communication capabilities in various applications. With the continued increase in complexity and scale, the need for an accurate and efficient simulation environment compatible with photonics and electronics becomes paramount. This paper introduces a method using the Verilog-A hardware language in the electronic design automation (EDA) platform to create equivalent circuit and compact models for photonic devices, considering their dispersion, polarization, multimode, and bidirectional transmission characteristics. These models can be co-simulated alongside electrical components in the electronic simulator, covering both the time and frequency domains simultaneously. Model parameters can be modified at any stage of the design process. Using the full link of an optoelectronic transceiver as an example, analyses from our Verilog-A model system show a mean absolute percentage error of 1.55% in the time-domain and 0.0318% in the frequency-domain when compared to the commercial co-simulation system (e.g., Virtuoso-INTERCONNECT). This underscores the accuracy and efficiency of our approach in OEICs design. By adopting this method, designers are enabled to conduct both electrical-specific and photonic-specific circuit analyses, as well as perform optoelectronic co-simulation within a unified platform seamlessly.
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http://dx.doi.org/10.1364/OE.510277 | DOI Listing |
Optoelectronic integrated circuits (OEICs) have enhanced integration and communication capabilities in various applications. With the continued increase in complexity and scale, the need for an accurate and efficient simulation environment compatible with photonics and electronics becomes paramount. This paper introduces a method using the Verilog-A hardware language in the electronic design automation (EDA) platform to create equivalent circuit and compact models for photonic devices, considering their dispersion, polarization, multimode, and bidirectional transmission characteristics.
View Article and Find Full Text PDFHigh-performance GeSn multiple-quantum-well (MQW) photodiode is demonstrated on a 200 mm Ge-on-insulator (GeOI) photonics platform for the first time. Both GeSn MQW active layer stack and Ge layer (top Ge layer of GeOI after bonding) were grown using a single epitaxy step on a standard (001)-oriented Si substrate (donor wafer) using a reduced pressure chemical vapor deposition (RPCVD). Direct wafer bonding and layer transfer technique were then employed to transfer the GeSn MQW device layers and Ge layer to a 200 mm SiO-terminated Si handle substrate.
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