Oxygen vacancies synergistic cobalt phosphide electron bridge modulated bismuth oxychloride/carbon nitride Z-scheme junction for efficient carbon dioxide reduction coupled with tetracycline oxidation.

J Colloid Interface Sci

Key Laboratory of Green and Precise Synthetic and Applications, Ministry of Education, College of Chemistry and Materials Science, Key Laboratory of Clean Energy and Green Cycle, Huaibei Normal University, Huaibei, Anhui 235000, PR China; Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, PR China. Electronic address:

Published: May 2024

Although great progress has been made with respect to electron bridges, the electron mobility of the state-of-the-art electron bridges is far from satisfactory because of weak electrical conductivity. To overcome the above issue, cobalt phosphide (CoP), as a model electron bridge, was modified by superficial oxygen vacancies (OVs) and embedded into a defective bismuth oxychloride/carbon nitride (BiOCl/g-CN) Z-scheme heterojunction to obtain atomic-level insights into the effect of surface OVs on CoP electron bridges. Compared to BiOCl/g-CN and bismuth oxychloride/cobalt phosphide/carbon nitride (BiOCl/CoP/g-CN) composites, the defective bismuth oxychloride/cobalt phosphide/carbon nitride (BiOCl/CoP/g-CN) heterojunction exhibited remarkable photocatalytic redox performance, indicating that the surface OVs-assisted CoP electron bridge effectively boosted electrical conductivity and yielded ultrafast electron transfer rates. The theoretical and experimental results demonstrate that the surface OVs play a critical role in improving the electrical conductivity of the CoP electron bridge, thereby accelerating electron mobility. This research provides insights into interfacial OVs-modified transition metal phosphide (TMP) electron bridges and their potential application in heterojunctions for energy crisis mitigation and environmental remediation.

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http://dx.doi.org/10.1016/j.jcis.2024.01.149DOI Listing

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