Electrochemical capacitors (ECs) show great perspective in alternate current (AC) filtering once they simultaneously reach ultra-fast response and high capacitance density. Nevertheless, the structure-design criteria of the two key properties are often mutually incompatible in electrode construction. Herein, it is proposed that combining vertically oriented porous carbon with enhanced interfacial capacitance (C) can efficiently solve this issue. Theoretically, the density function theory calculation shows that the C of a carbon electrode can be enhanced by boron doping due to the corresponding compact induced charge layer. Experimentally, the vertical-oriented boron-doped graphene nanowalls (BGNWs) electrodes, whose C is enhanced from 4.20 to 10.16 µF cm upon boron doping, are prepared on a large scale (480 cm) using a hot-filament chemical vapor deposition technique (HFCVD). Owing to the high C and vertically oriented porous structure, BGNWs-based EC has a high capacitance density of 996 µF cm with a phase angle of - 79.4° at 120 Hz in aqueous electrolyte and a high energy density of 1953 µFV cm in organic electrolyte. As a result, the EC is capable of smoothing 120 Hz ripples for 60 Hz AC filtering. These results provide enlightening insights on designing high-performance ECs for high-frequency applications.
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http://dx.doi.org/10.1002/smll.202310523 | DOI Listing |
Sensors (Basel)
January 2025
Institute of Semiconductor Technology (IHT), Technische Universität Braunschweig, Hans-Sommer-Straße 66, 38106 Braunschweig, Germany.
A novel piezoresistive cantilever microprobe (PCM) with an integrated electrothermal or piezoelectric actuator has been designed to replace current commercial PCMs, which require external actuators to perform contact-resonance imaging (CRI) of workpieces and avoid unwanted "forest of peaks" observed at large travel speed in the millimeter-per-second range. Initially, a PCM with integrated resistors for electrothermal actuation (ETA) was designed, built, and tested. Here, the ETA can be performed with a piezoresistive Wheatstone bridge, which converts mechanical strain into electrical signals by boron diffusion in order to simplify the production process.
View Article and Find Full Text PDFMaterials (Basel)
January 2025
Faculty of Physics, University of Warsaw, Pasteura 5, PL-02093 Warsaw, Poland.
Atomic clusters exhibit properties that fall between those found for individual atoms and bulk solids. Small boron clusters exhibit planar and quasiplanar structures, which are novel materials envisioned to serve as a platform for designing nanodevices and materials with unique physical and chemical properties. Through past research advancements, experimentalists demonstrated the successful incorporation of transition metals within planar boron rings.
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January 2025
Tananaev Institute of Chemistry-Subdivision of the Federal Research Centre "Kola Science Centre of the Russian Academy of Sciences" (ICT KSC RAS), Apatity 184209, Murmansk Region, Russia.
We proposed and investigated a refinement of technology for obtaining Mg-doped LiNbO (LN) crystals by co-doping it with B. LN:Mg (5.0 mol%) is now the most widely used material based on bulk lithium niobate.
View Article and Find Full Text PDFMaterials (Basel)
January 2025
Shandong Key Laboratory of Optical Communication Science and Technology, School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, China.
The n-TiO nanoballs-sticks (TiO NBSs) were successfully deposited on p-lightly boron-doped diamond (LBDD) substrates by the hydrothermal method. The temperature-dependent optoelectronic properties and carrier transport behavior of the n-TiO NBS/p-LBDD heterojunction were investigated. The photoluminescence (PL) of the heterojunction detected four distinct emission peaks at 402 nm, 410 nm, 429 nm, and 456 nm that have the potential to be applied in white-green light-emitting devices.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
Anhui Huasun Energy Company, Limited, Xuancheng 242000, China.
A rear emitter with a p-type boron-doped hydrogenated amorphous silicon/nanocrystalline silicon [a-Si:H(p)/nc-Si:H(p)] stack was prepared for the silicon heterojunction (SHJ) solar cell to improve its short-circuit current density (). CO plasma treatment (CO PT) was applied to a-Si:H(p) to facilitate the crystallization of the subsequently deposited nc-Si:H(p). To evaluate the effect of the CO PT, two different nc-Si:H(p) layers with low and high crystallinity (χ) were investigated.
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