Adding zinc (II) cations and formate anions improves the thermal phase stability of α-FAPbI materials, and the spin-coated thin films of such doped FAPbI (produced using MACl) show an increased emission lifetime of up to 3.7 μs on quartz (for FAMAPbI). This work investigates the effects of zinc and formate on the phase stability and time-resolved photoluminescence of FAPbI perovskites for solar cell applications. Perovskite samples with varying concentrations of zinc and formate were made by incorporating different amounts of zinc formate and zinc iodide and were characterized with XRD. Doping levels of 1.7% Zn(II) and 1.0% formate (relative to Pb) seem optimal. The thermal phase stability of the doped perovskite powders (FAPbI) and thin films (FAMAPbI) was assessed. XRD of the thin films after 6 months shows only the alpha-phase. The time-resolved photoluminescence spectroscopy of the doped spin-coated perovskite samples (FAMAPbI produced using MACl) is reported. The results show that synergy between an anionic and a cationic dopant can take place, making the perovskite thermally more phase-stable (not converting to the yellow delta-phase) with a longer charge carrier lifetime. In order to produce good thin films by spin coating, the use of MACl was essential.
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http://dx.doi.org/10.3390/molecules29020516 | DOI Listing |
Astrobiology
January 2025
Experimental Biophysics and Space Sciences, Department of Physics, Freie Universitaet Berlin, Berlin, Germany.
The (PSS) experiment was part of the European Space Agency's mission and was conducted on the International Space Station from 2014 to 2016. The PSS experiment investigated the properties of montmorillonite clay as a protective shield against degradation of organic compounds that were exposed to elevated levels of ultraviolet (UV) radiation in space. Additionally, we examined the potential for montmorillonite to catalyze UV-induced breakdown of the amino acid alanine and its potential to trap the resulting photochemical byproducts within its interlayers.
View Article and Find Full Text PDFNanoscale
January 2025
Department of Materials Science and Engineering, Kyushu Institute of Technology, 1-1 Sensui-cho, Tobata-ku, Kitakyushu 804-8550, Japan.
Self-organization realizes various nanostructures to control material properties such as superconducting vortex pinning and thermal conductivity. However, the self-organization of nucleation and growth is constrained by the growth geometric symmetry. To realize highly controlled three-dimensional nanostructures by self-organization, nanostructure formation that breaks the growth geometric symmetry thermodynamically and kinetically, such as tilted or in-plane aligned nanostructures, is a challenging issue.
View Article and Find Full Text PDFMolecular junctions (MJs) are celebrated nanoelectronic devices for mimicking conventional electronic functions, including rectifiers, sensors, wires, switches, transistors, negative differential resistance, and memory, following an understanding of charge transport mechanisms. However, capacitive nanoscale molecular junctions are rarely seen. The present work describes electrochemically (E-Chem) grown covalently attached molecular thin films of 10, 14.
View Article and Find Full Text PDFCureus
December 2024
Internal Medicine, Medical Teaching Institution (MTI) Hayatabad Medical Complex, Peshawar, PAK.
Background: Malaria and dengue are significant mosquito-borne diseases prevalent in tropical and subtropical climates, with increasing reports of co-infections. This study aimed to determine the frequency, patterns, and risk factors of these co-infections in Peshawar.
Methods: A cross-sectional study was conducted from June to December 2023 in three tertiary care hospitals in Peshawar.
J Phys Chem Lett
January 2025
Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, People's Republic of China.
We have systematically studied the electromagnetic transport properties of PbTe thin films under gate voltage modulation. The system demonstrates pronounced electron-electron interactions exclusively within the gate voltage range where only hole carriers are present. Furthermore, the Berry phase is utilized to qualitatively elucidate the transition between weak antilocalization (WAL) and weak localization (WL) through the regulation of gate voltage and temperature.
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