Vertically stacked van der Waals (vdW) heterostructures exhibit unique electronic, optical, and thermal properties that can be manipulated by twist-angle engineering. However, the weak phononic coupling at a bilayer interface imposes a fundamental thermal bottleneck for future two-dimensional devices. Using ultrafast electron diffraction, we directly investigated photoinduced nonequilibrium phonon dynamics in MoS/WS at 4° twist angle and WSe/MoSe heterobilayers with twist angles of 7°, 16°, and 25°. We identified an interlayer heat transfer channel with a characteristic timescale of ~20 picoseconds, about one order of magnitude faster than molecular dynamics simulations assuming initial intralayer thermalization. Atomistic calculations involving phonon-phonon scattering suggest that this process originates from the nonthermal phonon population following the initial interlayer charge transfer and scattering. Our findings present an avenue for thermal management in vdW heterostructures by tailoring nonequilibrium phonon populations.
Download full-text PDF |
Source |
---|---|
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC10807799 | PMC |
http://dx.doi.org/10.1126/sciadv.adj8819 | DOI Listing |
RSC Adv
December 2024
Chongqing Key Laboratory of Micro & Nano Structure Optoelectronics, School of Physical Science and Technology, Southwest University Chongqing 400715 China
Heterostructures can efficiently modulate the bandgap of semiconductors and enhance the separation of photocarriers, thereby enhancing the performance of optoelectronic devices. Herein, we design an InS/ZnInS van der Waals (vdW) heterostructure and investigate its electronic and photovoltaic properties using first principles calculation. Compared to its individual monolayers, the InS/ZnInS heterostructure not only possesses a smaller band gap of 2.
View Article and Find Full Text PDFAdv Mater
December 2024
Division of Advanced Materials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China.
Semiconducting single-wall carbon nanotubes (s-SWCNTs) represent one of the most promising materials for surpassing Moore's Law and developing the next generation of electronic devices. Despite numerous developed approaches, reducing the contact resistance of s-SWCNTs networks remains a significant challenge in achieving further enhancements in electronic performance. In this study, antimony triiodide (SbI) is efficiently encapsulated within high-purity s-SWCNTs films at low temperatures, forming 1D SbI@s-SWCNTs vdW heterostructures.
View Article and Find Full Text PDFACS Appl Mater Interfaces
December 2024
School of Information Science and Technology, Northwest University, Xi'an 710127, China.
Designing and discovering superior type-II band alignment are crucial for advancing optoelectronic device technologies. Here, we employ first-principles calculations to investigate the evolution of band edges in monolayer MoS, boron phosphide (BP), and MoS/BP heterostructures before and after their rolling into nanotubes. Our research results indicate that the intrinsic MoS/BP vertical heterostructures exhibit a type-II direct bandgap, but this feature is not robust under strain.
View Article and Find Full Text PDFInt J Mol Sci
December 2024
Department of Physics, Gachon University, Seongnum-si 13120, Gyeonggi-do, Republic of Korea.
The advent of two-dimensional (2D) materials and their capacity to form van der Waals (vdW) heterostructures has revolutionized numerous scientific fields, including electronics, optoelectronics, and energy storage. This paper presents a comprehensive investigation of bandgap engineering and band structure prediction in 2D vdW heterostructures utilizing density functional theory (DFT). By combining various 2D materials, such as graphene, hexagonal boron nitride (h-BN), transition metal dichalcogenides, and blue phosphorus, these heterostructures exhibit tailored properties that surpass those of individual components.
View Article and Find Full Text PDFNano Lett
December 2024
Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States.
We demonstrate an approach to creating nanoscale potentials in van der Waals layers integrated with a buried programmable ferroelectric layer. Using ultra-low-voltage electron beam lithography (ULV-EBL), we can program the ferroelectric polarization in AlBN (AlBN) thin films, generating structures with sizes as small as 35 nm. We demonstrate the ferroelectric field effect with a graphene/vdW stack on AlBN by creating a p-n junction.
View Article and Find Full Text PDFEnter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!