High-purity hydrogen produced by water electrolysis has become a sustainable energy carrier. Due to the corrosive environments and strong oxidizing working conditions, the main challenge faced by acidic water oxidation is the decrease in the activity and stability of anodic electrocatalysts. To address this issue, efficient strategies have been developed to design electrocatalysts toward acidic OER with excellent intrinsic performance. Electronic structure modification achieved through defect engineering, doping, alloying, atomic arrangement, surface reconstruction, and constructing metal-support interactions provides an effective means to boost OER. Based on introducing OER mechanism commonly present in acidic environments, this review comprehensively summarizes the effective strategies for regulating the electronic structure to boost the activity and stability of catalytic materials. Finally, several promising research directions are discussed to inspire the design and synthesis of high-performance acidic OER electrocatalysts.
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http://dx.doi.org/10.1016/j.isci.2023.108738 | DOI Listing |
ACS Nano
December 2024
Department of Materials Science and Engineering, Hanbat National University, Daejeon 34158, Republic of Korea.
Ultrasmall-scale semiconductor devices (≤5 nm) are advancing technologies, such as artificial intelligence and the Internet of Things. However, the further scaling of these devices poses critical challenges, such as interface properties and oxide quality, particularly at the high-/semiconductor interface in metal-oxide-semiconductor (MOS) devices. Existing interlayer (IL) methods, typically exceeding 1 nm thickness, are unsuitable for ultrasmall-scale devices.
View Article and Find Full Text PDFSmall Methods
December 2024
Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea.
This study introduces a novel method for achieving highly ordered-crystalline InGaO [0 ≤ x ≤ 0.6] thin films on Si substrates at 250 °C using plasma-enhanced atomic-layer-deposition (PEALD) with dual seed crystal layers (SCLs) of γ-AlO and ZnO. Field-effect transistors (FETs) with random polycrystalline InGaO channels (grown without SCLs) show a mobility (µFE) of 85.
View Article and Find Full Text PDFAdv Mater
December 2024
Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
Halide perovskites have emerged as promising materials for a wide variety of optoelectronic applications, including solar cells, light-emitting devices, photodetectors, and quantum information applications. In addition to their desirable optical and electronic properties, halide perovskites provide tremendous synthetic flexibility through variation of not only their chemical composition but also their structure and morphology. At the heart of their use in optoelectronic technologies is the interaction of light with electronic excitations in the form of excitons.
View Article and Find Full Text PDFSmall Methods
December 2024
Faculty of Materials Science and Engineering, Kunming University of Science and Technology, No. 68 Wenchang Road, Kunming, 650093, China.
Controllably modulating the structure of transition-metal chalcogenides (TMCs) from 2D to 1D and tuning their electronic properties has drawn particular attention currently due to their remarkable properties and potential applications. In this work, by precisely controlling the chemical concentration of Te atoms, the transformation from the 2D honeycomb AgTe monolayer to high-quality and well-defined 1D AgTe nanowires on the Ag(111) substrate has been successfully achieved. The combination of scanning tunneling microscopy measurements and first-principles calculations has confirmed that the mechanism underlying the entire dimensional transformation lies in the directional movement of Ag atoms in the 2D AgTe monolayer regulated by the concentration of Te atoms.
View Article and Find Full Text PDFJ Phys Chem A
December 2024
Department of Chemistry, Johns Hopkins University, 3400 N. Charles Street, Baltimore, Maryland 21218, United States.
Diaryl thieno-[3,4-]thiophenes (TT) are photoswitchable compounds that operate through reversible photoinduced cyclization/cycloreversion and have been designed specifically for integration within π-conjugated polymers to switchably manipulate polymer electronic properties. Here we report on how cross conjugating the central TT moiety impacts photocyclization dynamics as interrogated using transient absorption spectroscopy (TAS) for a series of switches built with electron-rich substituents that have various electronic interaction strengths with the TT core. For cross-conjugated structures exhibiting a propensity to switch in steady-state photoconversion experiments, ultrafast TAS reveals signatures of rapid dynamics (occurring within <1-10 ps) similar to those observed for unsubstituted switches and that are consistent with photocyclization.
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