AI Article Synopsis
- MnBi2Te4 is capable of generating unique topological quantum states due to its special structure, making it an interesting subject for research.
- Using a diamond anvil cell, high-pressure studies show that the material experiences an irreversible transition from metal to semiconductor at pressures below 15 GPa, while exceeding 17 GPa leads to structural damage and a partial amorphous state.
- These findings illustrate the phase transition behaviors of MnBi2Te4 under high pressure and open new avenues for exploring topological phases in materials.
Article Abstract
MnBi2Te4 can generate a variety of exotic topological quantum states, which are closely related to its special structure. We conduct comprehensive multiple-cycle high-pressure research on MnBi2Te4 by using a diamond anvil cell to study its phase transition behaviors under high pressure. As observed, when the pressure does not exceed 15 GPa, the material undergoes an irreversible metal-semiconductor-metal transition, whereas when the pressure exceeds 17 GPa, the layered structure is damaged and becomes irreversibly amorphous due to the lattice distortion caused by compression, but it is not completely amorphous, which presents some nano-sized grains after decompression. Our investigation vividly reveals the phase transition behaviors of MnBi2Te4 under high pressure cycling and paves the experimental way to find topological phases under high pressure.
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| http://dx.doi.org/10.1063/5.0184624 | DOI Listing |
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