Reconfiguring nucleation for CVD growth of twisted bilayer MoS with a wide range of twist angles.

Nat Commun

Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China.

Published: January 2024

Twisted bilayer (TB) transition metal dichalcogenides (TMDCs) beyond TB-graphene are considered an ideal platform for investigating condensed matter physics, due to the moiré superlattices-related peculiar band structures and distinct electronic properties. The growth of large-area and high-quality TB-TMDCs with wide twist angles would be significant for exploring twist angle-dependent physics and applications, but remains challenging to implement. Here, we propose a reconfiguring nucleation chemical vapor deposition (CVD) strategy for directly synthesizing TB-MoS with twist angles from 0° to 120°. The twist angles-dependent Moiré periodicity can be clearly observed, and the interlayer coupling shows a strong relationship to the twist angles. Moreover, the yield of TB-MoS in bilayer MoS and density of TB-MoS are significantly improved to 17.2% and 28.9 pieces/mm by tailoring gas flow rate and molar ratio of NaCl to MoO. The proposed reconfiguring nucleation approach opens an avenue for the precise growth of TB-TMDCs for both fundamental research and practical applications.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC10794196PMC
http://dx.doi.org/10.1038/s41467-023-44598-wDOI Listing

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