Ba-rich compositions in the BaSrMnO (BSMO) cubic perovskite (3C) system are magnetic ferroelectrics and are of interest for their strong magnetoelectric coupling. Beyond = 0.5, they only form in hexagonal polymorphs. Here, the 3C phase boundary is pushed to BaSrMnO for the thin films. Using regular pulsed laser deposition (rPLD), 3C BaSrMnO could be epitaxially stabilized on DyScO (101) substrates by using a 0.1% O/99.9% N gas mixture. However, the 3C phase was mixed with the 4H polymorph for films 24 nm thick and above, and the films were relatively rough. To improve flatness and phase purity, changes in growth kinetics were investigated and interval PLD (iPLD) was especially effective. In iPLD, deposition is interrupted after completion of approximately one monolayer, and the deposit is annealed for a specific period of time before repeating. Both film flatness and, more importantly, the volume of the 3C polymorph improved with iPLD, resulting in 40 nm single-phase films. The results imply that iPLD improves the persistent nucleation of highly metastable phases and offers a new approach to epitaxial stabilization of novel materials, including more Ba-rich BSMO compositions in the 3C structure.
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http://dx.doi.org/10.1021/acsami.3c11934 | DOI Listing |
ACS Nano
December 2024
College of Energy, Soochow Institute for Energy and Materials InnovationS (SIEMIS), Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou 215123, P. R. China.
An accurate assessment of the electrodeposition mechanism is essential for evaluating the electrochemical stability and reversibility of the metal anodes. Multiple strategies aimed at uniform Zn deposition have been extensively reported, yet it is challenging to clarify the Zn crystal growth regularity and activity due to the obscured physicochemical properties of as-deposited Zn. Herein, we present a protocol for elucidating the controlled epitaxial growth process of Zn crystals and quantifying their surface electrochemical activity using scanning electrochemical microscopy.
View Article and Find Full Text PDFNature
December 2024
Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, USA.
Recently, the bilayer nickelate LaNiO has been discovered as a new superconductor with transition temperature T near 80 K under high pressure. Despite extensive theoretical and experimental work to understand the nature of its superconductivity, the requirement of extreme pressure restricts the use of many experimental probes and limits its application potential. Here, we present signatures of superconductivity in LaNiO thin films at ambient pressure, facilitated by the application of epitaxial compressive strain.
View Article and Find Full Text PDFSci Adv
December 2024
Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, WA 99354, USA.
Charge transfer or redistribution at oxide heterointerfaces is a critical phenomenon, often leading to remarkable properties such as two-dimensional electron gas and interfacial ferromagnetism. Despite studies on LaNiO/LaFeO superlattices and heterostructures, the direction and magnitude of the charge transfer remain debated, with some suggesting no charge transfer due to the high stability of Fe (3d). Here, we synthesized a series of epitaxial LaNiO/LaFeO superlattices and demonstrated partial (up to ~0.
View Article and Find Full Text PDFNano Lett
December 2024
Department of Materials Science and Engineering, Institute of Science Tokyo, Ookayama 2-12-1, Meguro-ku, Tokyo 152-8552, Japan.
Materials (Basel)
November 2024
Department of Physics and Chemistry Emilio Segrè, University of Palermo, Via Archirafi 36, 90123 Palermo, Italy.
Silicon carbide is a wide-bandgap semiconductor useful in a new class of power devices in the emerging area of high-temperature and high-voltage electronics. The diffusion of SiC devices is strictly related to the growth of high-quality substrates and epitaxial layers involving high-temperature treatment processing. In this work, we studied the thermal stability of substrates of 4H-SiC in an inert atmosphere in the range 1600-2000 °C.
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