Quantum tunneling, in which electrons can tunnel through a finite potential barrier while simultaneously interacting with other matter excitation, is one of the most fascinating phenomena without classical correspondence. In an extremely thin metallic nanogap, the deep-subwavelength-confined plasmon modes can be directly excited by the inelastically tunneling electrons driven by an externally applied voltage. Light emission via inelastic tunneling possesses a great potential application for next-generation light sources, with great superiority of ultracompact integration, large bandwidth, and ultrafast response. In this Perspective, we first briefly introduce the mechanism of plasmon generation in the inelastic electron tunneling process. Then the state of the art in plasmonic tunneling junctions will be reviewed, particularly emphasizing efficiency improvement, precise construction, active control, and electrically driven optical antenna integration. Ultimately, we forecast some promising and critical prospects that require further investigation.
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http://dx.doi.org/10.1021/acsnano.3c08628 | DOI Listing |
Nano Lett
December 2024
Hefei National Research Center for Physical Sciences at the Microscale and CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China.
We investigate photocurrent generation mechanisms in a pentacene single-molecule junction using subnanometer resolved photocurrent imaging under both on- and off-resonance laser excitation. By employing a wavelength-tunable laser combined with a lock-in technique, net photocurrent signals are extracted to elucidate photoinduced electron tunneling processes. Under off-resonance excitation, photocurrents are found to arise from photon-assisted tunneling, with contributions from three distinct frontier molecular orbitals at different bias voltages.
View Article and Find Full Text PDFNanophotonics
January 2024
National University of Singapore (Chongqing) Research Institute, Chongqing 401123, China.
Nanophotonics
November 2023
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan.
We experimentally investigated the asymmetric dual-grating-gate plasmonic terahertz (THz) detector based on an InGaAs-channel high-electron-mobility transistor (HEMT) in the gate-readout configuration. Throughout the THz pulse detection measurement on the fabricated device, we discovered a new detection mechanism called the "3D rectification effect" at the positive gate bias application, which is a cooperative effect of the plasmonic nonlinearities in the channel with the diode nonlinearity in the heterobarrier between the InGaAs channel layer and the InAlAs spacer/carrier-supply/barrier layers, resulting in a giant enhancement of the detector responsivity. We also found that an undesired long-tail waveform observed on the temporal pulse photoresponse of the device is due to trapping of carriers to the donor levels in the silicon -doped carrier-supply layer when they tunnel through the barrier to the gate and can be eliminated completely by introducing the so-called inverted-HEMT structure.
View Article and Find Full Text PDFNanophotonics
May 2024
Department of Mechanical Engineering, Materials Science and Engineering Program, & Center for Experiments on Quantum Materials (CEQM), University of Colorado Boulder, Boulder, CO, USA.
Plasmonic modes confined to metallic nanostructures at the atomic and molecular scale push the boundaries of light-matter interactions. Within these extreme plasmonic structures of ultrathin nanogaps, coupled nanoparticles, and tunnelling junctions, new physical phenomena arise when plasmon resonances couple to electronic, exitonic, or vibrational excitations, as well as the efficient generation of non-radiative hot carriers. This review surveys the latest experimental and theoretical advances in the regime of extreme nano-plasmonics, with an emphasis on plasmon-induced hot carriers, strong coupling effects, and electrically driven processes at the molecular scale.
View Article and Find Full Text PDFJ Am Chem Soc
December 2024
Department of Chemistry, Fairfield University, Fairfield, Connecticut 06824, United States.
Single molecules bridging two metallic electrodes can emit light through electroluminescence when subjected to a bias voltage. Typically, light emission in such devices results from transitions between molecular states, although in the presence of light-matter coupling, the emission can result from a transition between hybrid light-matter states. Here, we create single metal-molecule-metal junctions and simultaneously collect conductance and electroluminescence data using a scanning tunneling microscope (STM) equipped with a custom spectrometer.
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