In anisotropic crystals, the direction-dependent effective mass of carriers can have a profound impact on spin transport dynamics. The puckered crystal structure of black phosphorus leads to direction-dependent charge transport and optical response, suggesting that it is an ideal system for studying anisotropic spin transport. To this end, we fabricate and characterize high-mobility encapsulated ultrathin black-phosphorus-based spin valves in a four-terminal geometry. Our measurements show that in-plane spin lifetimes are strongly gate tunable and exceed one nanosecond. Through high out-of-plane magnetic fields, we observe a fivefold enhancement in the out-of-plane spin signal case compared to in-plane and estimate a colossal spin-lifetime anisotropy of ∼6. This finding is further confirmed by oblique Hanle measurements. Additionally, we estimate an in-plane spin-lifetime anisotropy ratio of up to 1.8. Our observation of strongly anisotropic spin transport along three orthogonal axes in this pristine material could be exploited to realize directionally tunable spin transport.
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http://dx.doi.org/10.1038/s41563-023-01779-8 | DOI Listing |
Proc Natl Acad Sci U S A
January 2025
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan.
Chiral magnetic textures give rise to unconventional magnetotransport phenomena such as the topological Hall effect and nonreciprocal electronic transport. While the correspondence between topology or symmetry of chiral magnetic structures and such transport phenomena has been well established, a microscopic understanding based on the spin-dependent band structure in momentum space remains elusive. Here, we demonstrate how a chiral magnetic superstructure introduces an asymmetry in the electronic band structure and triggers a nonreciprocal electronic transport in a centrosymmetric helimagnet α-EuP.
View Article and Find Full Text PDFAdv Mater
January 2025
Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, CB3 0FS, UK.
Thick metamorphic buffers are considered indispensable for III-V semiconductor heteroepitaxy on large lattice and thermal-expansion mismatched silicon substrates. However, III-nitride buffers in conventional GaN-on-Si high electron mobility transistors (HEMT) impose a substantial thermal resistance, deteriorating device efficiency and lifetime by throttling heat extraction. To circumvent this, a systematic methodology for the direct growth of GaN after the AlN nucleation layer on six-inch silicon substrates is demonstrated using metal-organic vapor phase epitaxy (MOVPE).
View Article and Find Full Text PDFAnnu Rev Phys Chem
January 2025
1Department of Chemistry, University of Illinois Chicago, Chicago, Illinois, USA; email:
Inspired by the success of graphene, two-dimensional (2D) materials have been at the forefront of advanced (opto-)nanoelectronics and energy-related fields owing to their exotic properties like sizable bandgaps, Dirac fermions, quantum spin Hall states, topological edge states, and ballistic charge carrier transport, which hold promise for various electronic device applications. Emerging main group elemental 2D materials, beyond graphene, are of particular interest due to their unique structural characteristics, ease of synthetic exploration, and superior property tunability. In this review, we present recent advances in atomic-scale studies of elemental 2D materials with an emphasis on synthetic strategies and structural properties.
View Article and Find Full Text PDFPhys Chem Chem Phys
January 2025
Department of Chemistry, University of Manchester, Oxford Road, Manchester M13 9PL, UK.
An modelling workflow is used to predict the thermoelectric properties and figure of merit of the lanthanide cobalates LaCoO, PrCoO and NdCoO in the orthorhombic phase with the low-spin magnetic configuration. The LnCoO show significantly lower lattice thermal conductivity than the widely-studied SrTiO, due to lower phonon velocities, with a large component of the heat transport through an intraband tunnelling mechanism characteristic of amorphous materials. Comparison of the calculations to experimental measurements suggests the p-type electrical properties are significantly degraded by the thermal spin crossover, and materials-engineering strategies to suppress this could yield improved .
View Article and Find Full Text PDFSci Rep
January 2025
Shandong Key Laboratory of Medical Physics and Image Processing & Shandong Provincial Engineering and Technical Center of Light Manipulations, School of Physics and Electronics, Shandong Normal University, Jinan, 250358, China.
Borophene, as a new material with various configurations, has attracted significant research attention in recent years. In this study, the electronic properties of a series of χ-type borophene nanoribbons (BNRs) are investigated using a first-principles approach. The results show that the width and edge pattern of the nanoribbons can effectively tune their electronic properties.
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