Fine quaternary single-domain Heusler alloy nanoparticles with a composition of FeCoGaAl have been synthesized using a simple template-less chemical route for the first time. calculations and standard models have been used to analyze and interpret the experimental findings. The synthesized nanoparticles with an average crystallite size of 42 nm exhibited high saturation magnetization (>5 f.u.), high effective anisotropy constant (≈8 × 10 erg cc), high Curie temperature (>1200 K), low magnetic remanence (<0.2 f.u.) and low coercive field (<90 Oe), declaring their suitability for fabricating various nanomagnetic devices.
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http://dx.doi.org/10.1039/d3cp05382b | DOI Listing |
Sci Technol Adv Mater
January 2025
Magnetic Functional Device Group, Research Center for Magnetic and Spintronic Materials (CMSM), National Institute for Materials Science (NIMS), Tsukuba, Japan.
We demonstrate high-throughput evaluation of the half-metallicity of CoMnSi Heusler alloys by spin-integrated hard X-ray photoelectron spectroscopy (HAXPES) of composition-spread films performed with high-brilliance synchrotron radiation at NanoTerasu, which identifies the optimum composition showing the best half-metallicity. Co Mn Si composition-spread thin films for = 10-40% with a thickness of 30 nm are fabricated on MgO(100) substrates using combinatorial sputtering technique. The 2-ordering and (001)-oriented epitaxial growth of CoMnSi are confirmed by X-ray diffraction for = 18-40%.
View Article and Find Full Text PDFNat Nanotechnol
January 2025
Max Planck Institute for Microstructure Physics, Halle (Saale), Germany.
Magnetic random-access memory that uses magnetic tunnel junction memory cells is a high-performance, non-volatile memory technology that goes beyond traditional charge-based memories. Today, its speed is limited by the high magnetization of the memory storage layer. Here we prepare magnetic tunnel junction memory devices with a low magnetization ferrimagnetic Heusler alloy MnGe as the memory storage layer on technologically relevant amorphous substrates using a combination of a nitride seed layer and a chemical templating layer.
View Article and Find Full Text PDFAdv Sci (Weinh)
December 2024
Center for Spintronics Research Network, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka, 560-8531, Japan.
To develop voltage-controlled magnetization switching technologies for spintronics applications, a highly (422)-oriented CoFeSi layer on top of the piezoelectric PMN-PT(011) is experimentally demonstrated by inserting a vanadium (V) ultra-thin layer. The strength of the growth-induced magnetic anisotropy of the (422)-oriented CoFeSi layers can be artificially controlled by tuning the thicknesses of the inserted V and the grown CoFeSi layers. As a result, a giant converse magnetoelectric effect (over 10 s m) and a non-volatile binary state at zero electric field are simultaneously achieved in the (422)-oriented CoFeSi/V/PMN-PT(011) multiferroic heterostructure.
View Article and Find Full Text PDFACS Appl Mater Interfaces
December 2024
Department of Physics and Astrophysics, University of Delhi, New Delhi 110007, India.
We demonstrate experimentally that the combination of half-metallic property and shape memory features of the NiMnGaCu (NMGC) alloy can synergistically catalyze both the oxygen and hydrogen evolution reactions, leading to excellent water splitting. NMGC, a copper-doped nickel-based ferromagnetic shape memory alloy, undergoes first-order martensite to austenite phase transition with temperature variations. The martensite phase of NMGC demonstrates remarkable efficiency for both the oxygen evolution reaction (OER) and hydrogen evolution reaction (HER).
View Article and Find Full Text PDFACS Appl Mater Interfaces
December 2024
School of Physics, Southeast University, Nanjing 211189, China.
The external field-assisted hydrogen evolution reaction (HER), beyond modifying electrocatalysts themselves, has garnered significant research attention. However, achieving synergy between multiple fields to enhance the HER performance remains challenging and is not well-explored. Here, NiMnIn Heusler alloy thin films are fabricated using pulsed laser deposition on flexional Cu substrates.
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