AI Article Synopsis
- Photonic integrated circuits (PICs) using gallium nitride (GaN) have been mainly studied for C-band and visible applications, but research on O-band (1260 nm–1360 nm) PICs is lacking.
- A new microring resonator on a GaN-on-sapphire platform demonstrates significant performance, with an intrinsic Q-factor of ∼2.67 × 10 and an extinction ratio of 35.1 dB at specific wavelengths (1319.9 nm and 1332.1 nm).
- This development highlights the potential for combining GaN-based PICs with existing electronic and optoelectronic devices, paving the way for integrated circuits suitable for data-center and telecom applications.
Article Abstract
Photonic integrated circuits (PICs) based on gallium nitride (GaN) platforms have been widely explored for various applications at C-band (1530 nm∼1565 nm) and visible light wavelength range. However, for O-band (1260 nm∼1360 nm) commonly used in short reach/cost sensitive markets, GaN-based PICs still have not been fully investigated. In this article, a microring resonator with an intrinsic Q-factor of ∼2.67 × 10 and an extinction ratio (ER) of 35.1 dB at 1319.9 nm and 1332.1 nm, is monolithically integrated with a transverse electric-polarized focusing grating coupler and a ridge waveguide on a GaN-on-sapphire platform. This shows a great potential to further exploit the optical properties of GaN materials and integrate GaN-based PICs with the mature GaN active electronic and optoelectronic devices to form a greater platform of optoelectronic-electronic integrated circuits (OEICs) for data-center and telecom applications.
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| http://dx.doi.org/10.1364/OE.504505 | DOI Listing |
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