AI Article Synopsis
- Aluminum-doped GaO (AGO) thin films were created using a process called plasma-enhanced atomic layer deposition (PE-ALD), and various properties like growth mechanism and surface structure were analyzed.
- The theoretical bandgap of these AGO films ranges from 4.65 to 6.8 eV, making them versatile for different applications.
- Preliminary tests on photodetectors made from these AGO films indicate they have better performance compared to undoped versions, suggesting great potential for advanced gallium oxide photodetectors in deep-ultraviolet technology.
Article Abstract
Aluminum-doped GaO(AGO) thin films were prepared by plasma-enhanced atomic layer deposition (PE-ALD). The growth mechanism, surface morphology, chemical composition, and optical properties of AGO films were systematically investigated. The bandgap of AGO films can be theoretically set between 4.65 and 6.8 eV. Based on typical AGO films, metal-semiconductor-metal photodetectors (PDs) were created, and their photoelectric response was examined. The preliminary results show that PE-ALD grown AGO films have high quality and tunable bandgap, and AGO PDs possess superior characterizations to undoped films. The AGO realized using PE-ALD is expected to be an important route for the development of a new generation of gallium oxide-based photodetectors into the deep-ultraviolet.
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| http://dx.doi.org/10.1088/1361-6528/ad1afc | DOI Listing |
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