Download full-text PDF |
Source |
---|---|
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC10798255 | PMC |
http://dx.doi.org/10.1021/jacs.3c10758 | DOI Listing |
Commun Eng
December 2024
EPIC, Large Area Thin-film Transistor Electronics, imec, Kapeldreef 75, 3001, Leuven, Belgium.
J Synchrotron Radiat
January 2025
Dalian Coherent Light Source and State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, People's Republic of China.
Free-electron laser (FEL) facilities operating at MHz repetition rates can emit lasers with average powers reaching hundreds of watts. Partial absorption of this power induces thermal deformation of a few micrometres on the mirror surface. Such deformation degrades the characteristics of the reflected photon beam, leading to focal spot aberrations and wavefront distortions that fail to meet experimental requirements.
View Article and Find Full Text PDFSmall Methods
December 2024
Department of Materials Science and Engineering, National Cheng Kung University, Tainan, 70101, Taiwan.
To enhance the efficiency of machine vision system, physical hardware capable of sensing and encoding is essential. However, sensing and encoding color information has been overlooked. Therefore, this work utilizes an indium-gallium-zinc oxide (IGZO) phototransistor to detect varying densities of red, green, and blue (RGB) light, converting them into corresponding drain current (I) states.
View Article and Find Full Text PDFMikrochim Acta
December 2024
Academy of Scientific and Innovative Research (AcSIR), CSIR-Human Resource Development Centre, (CSIR-HRDC) Campus, Postal Staff College Area, Sector 19, Kamla Nehru Nagar, Ghaziabad, Uttar Pradesh, 201002, India.
Cryst Growth Des
November 2024
Department of Chemistry and Biochemistry, The City College of New York, New York, New York 10031, United States.
Indium selenide, InSe, has recently attracted growing interest due to its remarkable properties, including room temperature ferroelectricity, outstanding photoresponsivity, and exotic in-plane ferroelectricity, which open up new regimes for next generation electronics. InSe also provides the important advantage of tuning the electrical properties of ultrathin layers with an external electrical and magnetic field, making it a potential platform to study novel two-dimensional physics. Yet, InSe has many different polymorphs, and it has been challenging to synthesize a single phase material, especially using scalable growth methods, as needed for technological applications.
View Article and Find Full Text PDFEnter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!