Using a reactive molecular beam with high kinetic energy (), it is possible to speed gas-surface reactions involving high activation barriers (), which would require elevated pressures () if a random gas with a Maxwell-Boltzmann distribution is used. By simply computing the number of molecules that overcome the activation barrier in a random gas at and in a molecular beam at = , we establish an - equivalence curve, through which we postulate that molecular beams are ideal tools to investigate gas-surface reactions that involve high activation energies. In particular, we foresee the use of molecular beams to simulate gas surface reactions within the industrial-range (>10 bar) using surface-sensitive ultra-high vacuum (UHV) techniques, such as X-ray photoemission spectroscopy (XPS). To test this idea, we revisit the oxidation of the Cu(111) surface combining O molecular beams and XPS experiments. By tuning the kinetic energy of the O beam in the range of 0.24-1 eV, we achieve the same sequence of surface oxides obtained in ambient pressure photoemission (AP-XPS) experiments, in which the Cu(111) surface was exposed to a random O gas up to 1 mbar. We observe the same surface oxidation kinetics as in the random gas, but with a much lower dose, close to the expected value derived from the equivalence curve.
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http://dx.doi.org/10.1039/d3cp05071h | DOI Listing |
Rev Sci Instrum
January 2025
Institut für Physikalische Chemie, Christian-Albrechts-Universität zu Kiel, Max-Eyth-Straße 1, 24118 Kiel, Germany.
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Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China.
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Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, China.
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Plant Production Department, Faculty of Agriculture Saba Basha, Alexandria University, Alexandria 21531, Egypt; Work Station of Science and Technique for Post-doctoral in Sugar Beet Institute Afliated to Heilongjiang University, 74 Xuefu Road, Harbin 150000, Heilongjiang, China.
Ion beam mutagenesis is an advanced technique capable of inducing substantial changes in plants, resulting in noticeable alterations in their growth. However, the precise molecular mechanisms underlying the effects of radiation on soybeans remain unclear. This study investigates the impact of ionizing radiation on soybean development through a comprehensive approach that integrates transcriptomics and metabolomics.
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